Conductivity of a graphene strip: width and gate-voltage dependencies

We study the conductivity of a graphene strip taking into account electrostatically-induced charge accumulation on its edges. Using a local dependency of the conductivity on the carrier concentration we find that the electrostatic size effect in doped graphene strip of the width of 0.5 - 3 $% \mu $m can result in a significant (about 40%) enhancement of the effective conductivity in comparison to the infinitely wide samples. This effect should be taken into account both in the device simulation as well as for verification of scattering mechanisms in graphene.