An Extended H\"uckel Study of the Electronic Properties of III-V Compounds and Their Alloys

In this work, we performed tight binding calculations of the electronic structure of III-V semiconductors compounds and their alloys based on the Extended H\"uckel Theory (EHT), where the H\"uckel parameters for the binary compounds were generated following a simulated annealing procedure. In particular, this article is focused on the dependency between band gap and the applied pressure and also the alloy composition.