pith. sign in

arxiv: 1409.2189 · v2 · pith:YKCJPYIUnew · submitted 2014-09-08 · ❄️ cond-mat.mtrl-sci · cond-mat.supr-con

Enhancement of thermoelectric properties by Se substitution in layered bismuth-chalcogenide LaOBiS2-xSex

Yoshikazu Mizuguchi , Atsushi Omachi , Yosuke Goto , Yoichi Kamihara , Masanori Matoba , Takafumi Hiroi , Joe Kajitani , Osuke Miura This is my paper
classification ❄️ cond-mat.mtrl-sci cond-mat.supr-con
keywords laobis2-xsexaroundenhancementfactorlaobis1layeredpowerproperties
0
0 comments X
read the original abstract

We have investigated the thermoelectric properties of the novel layered bismuth chalcogenides LaOBiS2-xSex. The partial substitution of S by Se produced the enhancement of electrical conductivity (metallic characteristics) in LaOBiS2-xSex. The power factor largely increased with increasing Se concentration. The highest power factor was 4.5 uW/cmK2 at around 470 deg. C for LaOBiS1.2Se0.8. The obtained dimensionless figure-of-merit (ZT) was 0.17 at around 470 deg. C in LaOBiS1.2Se0.8.

This paper has not been read by Pith yet.

discussion (0)

Sign in with ORCID, Apple, or X to comment. Anyone can read and Pith papers without signing in.