A comparing study on optoelectronic properties of phototransistors based on MEH-PPV and PbS QD hybrids with bulk- and layer-heterojunction

Xiaoxian Song , Yating Zhang , Ran Wang , Mingxuan Cao , Yongli Che , Jianlong Wang , Haiyan Wang , Lufan Jin

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Haitao Dai Xin Ding Guizhong Zhang Jianquan Yao

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classification ❄️ cond-mat.mes-hall cond-mat.mtrl-sci

keywords layer-heterojunctionmeh-ppvphotophototransistorsbulk-bulk-heterojunctioncarrierchoosing

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As the responsivity (R) of a thin film photo detector is proportional to the product of the photo-induced carrier density (n) and mobility (u) (Z. Sun, Z. Liu, J. Li, G.-a. Tai, S. Lau and F. Yan, Adv. Mater., 24, 5878, 2012), which of the types is conducive to photo detection, choosing between layer-heterojunction (LH) and bulk-heterojunction (BH) field effect phototransistors (FEpTs), is still unknown. A comparison study is performed based on an MEH-PPV and PbS QDs hybrid.

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A comparing study on optoelectronic properties of phototransistors based on MEH-PPV and PbS QD hybrids with bulk- and layer-heterojunction

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