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The growth mechanism of CuO nanowires synthesized by the thermal oxidation method

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arxiv 1604.04411 v2 pith:ALNRW2OV submitted 2016-04-15 cond-mat.mes-hall cond-mat.mtrl-sci

Lilin Xie , Yoshifumi Oshima , Xiaona Zhang This is my paper · ORCID
classification cond-mat.mes-hallcond-mat.mtrl-sci
keywords growthmechanismnanowiresmethodoxidationsynthesizedthermalwere
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Large-scale CuO nanowires are commonly synthesized by the thermal oxidation method. However, the growth mechanism remains controversial between diffusion growth mechanism and vapor-solid (VS) growth mechanism. In this study, we investigated the morphology and atomic structure of the CuO nanowires by electron microscopes to clarify the growth mechanism. We found that they were grown with the annealing ambient during the cooling process and there were screw dislocations in the nanowires. These features indicate that the VS growth mechanism is applicable to explain the growth of the CuO nanowires. In addition, the kinetic consideration also supports the VS growth mechanism.

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