Three-Dimensional Anisotropic Magnetoresistance in the Dirac Node-Line Material ZrSiSe

The family of materials defined as ZrSiX (X = S, Se, Te) has been established as Dirac node-line semimetals, and subsequent study is urgent to exploit the promising application of unusual magnetoresistance property. In this work, we systematically investigated the anisotropic magnetoresistance in the newly-discovered Dirac node-line material ZrSiSe. By applying a magnetic field of 3 T by a vector field, the three-dimensional (3D) magnetoresistance (MR) shows strong anisotropy. The MR ratio of maximum and minimum directions can reach 7 at 3 T and keeps increasing at the higher magnetic field. The anisotropic MR forms a butterfly-shaped curve, which indicates the quasi-2D electronic structures. This is further confirmed by the angular-dependent Shubnikov-de Haas (SdH) oscillations. The first-principles calculations establish the quasi-2D tubular-shaped Fermi surface near the X point in the Brillouin zone. Our findings shed light on the 3D mapping of MR and the potential applications in magnetic sensors based on ZrSiSe Dirac materials.