Atomic manipulation of the gap in Bi₂Sr₂CaCu₂O_(8+x)

Single atom manipulation within doped correlated electron systems would be highly beneficial to disentangle the influence of dopants, structural defects and crystallographic characteristics on their local electronic states. Unfortunately, their high diffusion barrier prevents conventional manipulation techniques. Here, we demonstrate the possibility to reversibly manipulate select sites in the optimally doped high temperature superconductor Bi$_{2}$Sr$_{2}$CaCu$_{2}$O$_{8+x}$ using the local electric field of the tip. We show that upon shifting individual Bi atoms at the surface, the spectral gap associated with superconductivity is seen to reversibly change by as much as 15 meV (~5% of the total gap size). Our toy model that captures all observed characteristics suggests the field induces lateral movement of point-like objects that create a local pairing potential in the CuO2 plane.