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Growth and Characterization of Metalorganic Vapor-Phase Epitaxy-Grown b{eta}-(AlxGa1-x)2O3/b{eta}-Ga2O3 Heterostructure Channels

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arxiv 2009.10952 v2 pith:KW3DS3KY submitted 2020-09-23 physics.app-ph cond-mat.mtrl-sci

Growth and Characterization of Metalorganic Vapor-Phase Epitaxy-Grown b{eta}-(AlxGa1-x)2O3/b{eta}-Ga2O3 Heterostructure Channels

Praneeth Ranga , Arkka Bhattacharyya , Adrian Chmielewski , Saurav Roy , Rujun Sun , Michael A. Scarpulla , Nasim Alem , Sriram Krishnamoorthy This is my paper
classification physics.app-ph cond-mat.mtrl-sci
keywords alxga1-xchannelcharacterizationelectronepitaxy-grownga2o3growthhall
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We report on the growth and characterization of metalorganic vapor-phase epitaxy-grown \b{eta}-(AlxGa1-x)2O3/\b{eta}-Ga2O3 modulation-doped heterostructures. Electron channel is realized in the heterostructure by utilizing a delta-doped \b{eta}-(AlxGa1-x)2O3 barrier. Electron channel characteristics are studied using transfer length method, capacitance-voltage and Hall measurements. Hall sheet charge density of 1.06 x 1013 cm-2 and mobility of 111 cm2/Vs is measured at room temperature. Fabricated transistor showed peak current of 22 mA/mm and on-off ratio of 8 x 106. Sheet resistance of 5.3 k{\Omega}/Square is measured at room temperature, which includes contribution from a parallel channel in \b{eta}-(AlxGa1-x)2O3.

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