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GaN/AlGaN 2DEGs in the quantum regime: Magneto-transport and photoluminescence to 60 tesla

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arxiv 2011.01365 v1 pith:6RYLICH2 submitted 2020-11-02 cond-mat.mes-hall cond-mat.mtrl-sci

classification cond-mat.mes-hallcond-mat.mtrl-sci
keywords quantummeasurementsalgandegsdemonstrateelectronfieldshall
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abstract

Using high magnetic fields up to 60 T, we report magneto-transport and photoluminescence (PL) studies of a two-dimensional electron gas (2DEG) in a GaN/AlGaN heterojunction grown by molecular-beam epitaxy. Transport measurements demonstrate that the quantum limit can be exceeded (Landau level filling factor $\nu < 1$), and show evidence for the $\nu =2/3$ fractional quantum Hall state. Simultaneous optical and transport measurements reveal synchronous quantum oscillations of both the PL intensity and longitudinal resistivity in the integer quantum Hall regime. PL spectra directly reveal the dispersion of occupied Landau levels in the 2DEG and therefore the electron mass. These results demonstrate the utility of high (pulsed) magnetic fields for detailed measurements of quantum phenomena in high-density 2DEGs.

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