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Ferroelectric gating of the PL in MoSe2

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arxiv 2011.04985 v3 pith:3SXRALWG submitted 2020-11-10 cond-mat.mtrl-sci

Ferroelectric gating of the PL in MoSe2

classification cond-mat.mtrl-sci
keywords cipsferroelectricheterostructuremonolayermosecuinpdemonstrateelectric
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
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We demonstrate a 2D ferroelectric heterostructure with monolayer MoSe$_2$ and CuInP$_2$S$_6$ (CIPS). In the heterostructure, the electric polarization of CIPS results in c electronic modulation in monolayer MoSe$_2$.

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