Large zero-bias peaks in InSb-Al hybrid semiconductor-superconductor nanowire devices
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We report electron transport studies on InSb-Al hybrid semiconductor-superconductor nanowire devices. Tunnelling spectroscopy is used to measure the evolution of subgap states while varying magnetic field and voltages applied to various nearby gates. At magnetic fields between 0.7 and 0.9 T, the differential conductance contains large zero bias peaks (ZBPs) whose height reaches values on the order 2e2/h. We investigate these ZBPs for large ranges of gate voltages in different devices. We discuss possible interpretations in terms of disorder-induced subgap states, Andreev bound states and Majorana zero modes.
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Majorana zero modes in semiconductor-superconductor hybrid structures: Defining topology in short and disordered nanowires through Majorana splitting
Exponential protection of Majorana zero modes in finite disordered nanowires holds only for disorder much smaller than the superconducting gap.
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