Systematic characterization of nanoscale h-BN quantum sensor spots created by helium-ion microscopy

The nanosized boron vacancy ($V_\mathrm{B}^-$) defect spot in hexagonal boron nitride ($h$-BN) is promising for a local magnetic field quantum sensor. One of its advantages is that a helium-ion microscope can make a spot at any location in an $h$-BN flake with nanometer accuracy. In this study, we investigate the properties of the created nanosized $V_\mathrm{B}^-$ defect spots by systematically varying three conditions: the helium-ion dose, the thickness of the $h$-BN flakes, and the substrate on which the $h$-BN flakes are attached. The physical background of the results obtained is successfully interpreted using Monte Carlo calculations. From the findings obtained here, a guideline for their optimal creation conditions is obtained to maximize its performance as a quantum sensor concerning sensitivity and localization.