Orbital torque switching of room temperature two-dimensional van der Waals ferromagnet Fe3GaTe2

Efficiently manipulating the magnetization of van der Waals ferromagnets has attracted considerable interest in developing room-temperature two-dimensional material-based memory and logic devices. Here, taking advantage of the unique properties of the van der Waals ferromagnet as well as promising characteristics of the orbital Hall effect, we demonstrate the room-temperature magnetization switching of van der Waals ferromagnet Fe3GaTe2 through the orbital torque generated by the orbital Hall material, Titanium (Ti). The switching current density is estimated to be around 1.6 x 10^6 A/cm^2, comparable to that achieved in Fe3GaTe2 using spin-orbit torque from spin Hall materials. The efficient magnetization switching arises from the combined effects of the large orbital Hall conductivity of Ti and the strong spin-orbit correlation of the Fe3GaTe2, as confirmed through theoretical calculations. Our findings advance the understanding of orbital torque switching and pave the way for exploring material-based orbitronic devices.