Efficient Analysis of Carrier Transport and TM-TE Emission in AlGaN UVC LEDs via Multi-band Localization Landscape Theory

AlGaN-based UVC LEDs (220-250 nm) suffer from poor hole confinement and strain-induced |Z>-band dominance at high Al content (>60%), leading to increased TM emission and reduced external quantum efficiency (EQE). While conventional k.p models combined with Schrodinger, Poisson, and drift-diffusion solvers are widely used to study optical transitions, they are computationally expensive. In this work, we apply the multiband Localization Landscape (LL) model, including the effect of strain, as an alternative that replaces the eigenvalue problem to efficiently capture quantum effects and carrier localization. Using the 3D multi-band LL model with the Wigner-Weyl formalism, we reproduce emission and absorption spectra trends similar to the results in 3D k.p calculations, but with significantly reduced simulation time. The polarization ratio also agrees well with published experimental results across a wide spectral range. Furthermore, we analyze electrical characteristics such as band structure, polarization switching, and carrier confinement under alloy fluctuations and strain. This multi-band LL-based approach provides a fast and reliable solution for understanding and optimizing UVC LED performance.