Method of envelope functions and intervalley Gamma-X_z interaction of states in (001) III-V semiconductor heterostructures

The kp method is used to analyze the problem of intervalley \Gamma-X_z interaction of conduction band states in the (001) lattice-matched III-V semiconductor heterostructures. A convenient basis for expansion of the wave function is systematically selected and a multiband system of equations is derived for the envelope functions which is then reduced to a system of three equations for three valleys (\Gamma_1, X_1, and X_3) by using a unitary transformation. Intervalley \Gamma-X_z mixing is described by short-range potentials localized at heterojunctions. The expressions for the parameters determining \Gamma-X_z mixing strength explicitly contain the chemical composition profile of the structure since mixing is naturally stronger for abrupt heterojunctions than for structures with a continuously varying chemical composition. It is shown that the direct \Gamma_1-X_1 interaction of comparable strength to \Gamma_1-X_3 interaction exists. This must be taken into account when interpreting tunnel and optical experiments since X_1 valley is substantially lower in energy than X_3 valley.