pith. sign in

arxiv: cond-mat/0211697 · v1 · submitted 2002-11-29 · ❄️ cond-mat.mtrl-sci · cond-mat.mes-hall

Anisotropic Magnetoresistance in GaMnAs films

K.Y. Wang , K.W. Edmonds , R.P. Campion , L.X. Zhao , A.C. Neumann , C.T. Foxon , B.L. Gallagher , P.C. Main This is my paper
classification ❄️ cond-mat.mtrl-sci cond-mat.mes-hall
keywords increasingmagnetoresistanceanisotropycontentincreasesmagneticanisotropicbeen
0
0 comments X
read the original abstract

The magnetoresistance in a series of Ga1-xMnxAs samples with 0.2 =< x =< 0.8 have been measured for three mutually orthogonal orientations of the external magnetic field. The anisotropy magnetoresistance decreases with increasing of the Mn content, which means that the magnetic disorder or defects scattering increases with increasing of Mn content. And also the magneto-crystalline anisotropy increases with increasing of Mn concentration.

This paper has not been read by Pith yet.

discussion (0)

Sign in with ORCID, Apple, or X to comment. Anyone can read and Pith papers without signing in.