Spin-dependent transport in the p-type ultra-narrow silicon quantum well

A. M. Malyarenko; L. E. Klyachkin; M. I. Bovt; N. T. Bagraev; O. N. Guimbitskaya; S. A. Rykov; V. A. Mashkov; V. V. Romanov; W. Gehlhoff

arxiv: cond-mat/0608628 · v1 · submitted 2006-08-29 · ❄️ cond-mat.mes-hall · cond-mat.supr-con

Spin-dependent transport in the p-type ultra-narrow silicon quantum well

N. T. Bagraev , M. I. Bovt , W. Gehlhoff , O. N. Guimbitskaya , L. E. Klyachkin , A. M. Malyarenko , V. A. Mashkov , V. V. Romanov

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S. A. Rykov

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classification ❄️ cond-mat.mes-hall cond-mat.supr-con

keywords quantumbarriersp-typesi-qwsiliconspin-dependentsubbandssuperconductor

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We present the findings of the spin-dependent transport of the 2D holes in the p-type ultra-narrow self-assembled silicon quantum well (Si-QW) confined by the superconductor barriers on the n-type Si (100) surface. The Aharonov-Casher conductance oscillations caused by the Rashba spin-orbit interaction are found to interplay with the quantization phenomena induced by the creation of the two-dimensional subbands in Si-QW and the quantum subbands due to the Andreev reflection from the superconductor barriers.

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Spin-dependent transport in the p-type ultra-narrow silicon quantum well

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