Electronic structure of graphite/6H-SiC interfaces

F. Speck; K. V. Emtsev; K.-Y. Gao; L. Ley; Th. Seyller

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Electronic structure of graphite/6H-SiC interfaces

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arxiv cond-mat/0610220 v1 pith:LWZIGNIN submitted 2006-10-09 cond-mat.mtrl-sci

Electronic structure of graphite/6H-SiC interfaces

Th. Seyller , K. V. Emtsev , F. Speck , K.-Y. Gao , L. Ley This is my paper

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keywords h-sicbarrierselectronicgraphiten-typestructurebarriercontacts

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We have studied the electronic structure of the interface between 6H-SiC{0001} and graphite. On n-type and p-type 6H-SiC(0001) we observe Schottky barriers of Phi_b,n^Si= 0.3+-0.1eV and Phi_b,p^Si=2.7+-0.1eV, respectively. The observed barrier is face specific: on n-type 6H-SiC(000-1) we find Phi_b,n^C=1.3+-0.1eV. The impact of these barriers on the electrical properties of metal/SiC contacts is discussed.

Electronic structure of graphite/6H-SiC interfaces

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