arxiv: cond-mat/0610692 · v1 · pith:ARGJDJQNnew · submitted 2006-10-25 · ❄️ cond-mat.mes-hall · cond-mat.mtrl-sci

AMR and magnetometry studies of ultra thin GaMnAs films

A. W. Rushforth , A. D. Giddings , K. W. Edmonds , R. P. Campion , C. T. Foxon , B. L. Gallagher This is my paper

classification ❄️ cond-mat.mes-hall cond-mat.mtrl-sci

keywords filmsmagnetometrythinultraanisotropiccomponentcrystalcurrent

0 comments p. Extension

Add this Pith Number to your LaTeX paper

\usepackage{pith}
\pithnumber{ARGJDJQN}

Prints a linked pith:ARGJDJQN badge after your title and writes the identifier into PDF metadata. Compiles on arXiv with no extra files. Learn more

read the original abstract

We have measured the Anisotropic Magnetoresistance (AMR) of ultra thin (5nm) Ga(0.95)Mn(0.05)As films. We find that the sign of the AMR can be positive or negative, which may depend on the direction of the current with respect to the crystal. At low temperatures, transport measurements and SQUID magnetometry suggest that the magnetisation has a component pointing out of the plane of the film.

This paper has not been read by Pith yet.

AMR and magnetometry studies of ultra thin GaMnAs films

discussion (0)