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Tunneling anisotropic magnetoresistance and spin-orbit coupling in Fe/GaAs/Au tunnel junctions

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arxiv cond-mat/0611406 v1 pith:B5EDVASD submitted 2006-11-15 cond-mat.mes-hall cond-mat.mtrl-sci

J. Moser , A. Matos-Abiague , D. Schuh , W. Wegscheider , J. Fabian , D. Weiss This is my paper
classification cond-mat.mes-hallcond-mat.mtrl-sci
keywords anisotropiccouplingeffectgaasmagnetoresistancespin-orbittunnelinganisotropy
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We report the observation of tunneling anisotropic magnetoresistance effect (TAMR) in the epitaxial metal-semiconductor system Fe/GaAs/Au. The observed two-fold anisotropy of the resistance can be switched by reversing the bias voltage, suggesting that the effect originates from the interference of the spin-orbit coupling at the interfaces. Corresponding model calculations reproduce the experimental findings very well.

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