A Graphene Field-Effect Device

2) ((1) Advanced Microelectronic Center Aachen (AMICA); (2) Institute of Semiconductor Electronics; Aachen; AMO GmbH; Germany; Germany); H. Kurz (1; M. Baus (2); M.C. Lemme (1); RWTH Aachen University

arxiv: cond-mat/0703208 · v1 · submitted 2007-03-08 · ❄️ cond-mat.mes-hall · cond-mat.mtrl-sci

A Graphene Field-Effect Device

M.C. Lemme (1) , T.J. Echtermeyer (1) , M. Baus (2) , H. Kurz (1 , 2) ((1) Advanced Microelectronic Center Aachen (AMICA) , AMO GmbH , Aachen , Germany

show 3 more authors

(2) Institute of Semiconductor Electronics RWTH Aachen University Germany)

This is my paper

classification ❄️ cond-mat.mes-hall cond-mat.mtrl-sci

keywords graphenedevicetop-gatedappliedcarriercmos-compatiblecomparedconventional

0 comments

read the original abstract

In this letter, a top-gated field effect device (FED) manufactured from monolayer graphene is investigated. Except for graphene deposition, a conventional top-down CMOS-compatible process flow is applied. Carrier mobilities in graphene pseudo-MOS structures are compared to those obtained from top-gated Graphene-FEDs. The extracted values exceed the universal mobility of silicon and silicon-on-insulator MOSFETs.

This paper has not been read by Pith yet.

A Graphene Field-Effect Device

discussion (0)