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arxiv: 1001.2449 · v1 · submitted 2010-01-14 · ❄️ cond-mat.mtrl-sci · cond-mat.mes-hall

Exchange bias of a ferromagnetic semiconductor by a ferromagnetic metal

K. Olejnik , P. Wadley , J. A Haigh , K. W. Edmonds , R. P. Campion , A. W. Rushforth , B. L. Gallagher , C. T. Foxon
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T. Jungwirth J. Wunderlich S. S. Dhesi S. Cavill G. van der Laan E Arenholz
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classification ❄️ cond-mat.mtrl-sci cond-mat.mes-hall
keywords biasexchangeferromagneticinterfacelayeradditionantiferromagneticbiassed
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We demonstrate an exchange bias in (Ga,Mn)As induced by antiferromagnetic coupling to a thin overlayer of Fe. Bias fields of up to 240 Oe are observed. Using element-specific x-ray magnetic circular dichroism measurements, we distinguish a strongly exchange coupled (Ga,Mn)As interface layer in addition to the biassed bulk of the (Ga,Mn)As film. The interface layer remains polarized at room temperature.

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