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Effect of picosecond strain pulses on thin layers of the ferromagnetic semiconductor (Ga,Mn)(As,P)

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arxiv 1007.3641 v1 pith:2O46GKTJ submitted 2010-07-21 cond-mat.mtrl-sci cond-mat.other

Effect of picosecond strain pulses on thin layers of the ferromagnetic semiconductor (Ga,Mn)(As,P)

classification cond-mat.mtrl-sci cond-mat.other
keywords effectps-aspstrainamplitudelayermokepicosecondpulses
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
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abstract

The effect of picosecond acoustic strain pulses (ps-ASP) on a thin layer of (Ga,Mn)As co-doped with phosphorus was probed using magneto-optical Kerr effect (MOKE). A transient MOKE signal followed by low amplitude oscillations was evidenced, with a strong dependence on applied magnetic field, temperature and ps-ASP amplitude. Careful interferometric measurement of the layer's thickness variation induced by the ps-ASP allowed us to model very accurately the resulting signal, and interpret it as the strain modulated reflectivity (differing for $\sigma_{\pm}$ probe polarizations), independently from dynamic magnetization effects.

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