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Terahertz Kerr and Reflectivity Measurements on the Topological Insulator Bi2Se3

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arxiv 1007.4482 v2 pith:ECVDDIWN submitted 2010-07-26 cond-mat.str-el cond-mat.mtrl-sci

Terahertz Kerr and Reflectivity Measurements on the Topological Insulator Bi2Se3

classification cond-mat.str-el cond-mat.mtrl-sci
keywords bulkkerrmeasurementsbi2se3carrierinsulatorsurfaceterahertz
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
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We report the first terahertz Kerr measurements on bulk crystals of the topological insulator Bi2Se3. At T=10K and fields up to 8T, the real and imaginary Kerr angle and reflectance measurements utilizing both linearly and circularly polarized incident radiation were measured at a frequency of 5.24meV. A single fluid free carrier bulk response can not describe the line-shape. Surface states with a small mass and surprisingly large associated spectral weight quantitatively fit all data. However, carrier concentration inhomogeneity has not been ruled out. A method employing a gate is shown to be promising for separating surface from bulk effects.

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