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Phase qubits fabricated with trilayer junctions

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arxiv 1101.0232 v2 pith:67XDGWJ6 submitted 2010-12-31 cond-mat.supr-con

Phase qubits fabricated with trilayer junctions

M. Weides , R. C. Bialczak , M. Lenander , E. Lucero , Matteo Mariantoni , M. Neeley , A. D. O'Connell , D. Sank
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H. Wang J. Wenner T. Yamamoto Y. Yin A. N. Cleland J. Martinis
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classification cond-mat.supr-con
keywords junctionsdielectricisolationphasequbitqubitstimetrilayer
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abstract

We have developed a novel Josephson junction geometry with minimal volume of lossy isolation dielectric, being suitable for higher quality trilayer junctions implemented in qubits. The junctions are based on in-situ deposited trilayers with thermal tunnel oxide, have micron-sized areas and a low subgap current. In qubit spectroscopy only a few avoided level crossings are observed, and the measured relaxation time of $T_1\approx400\;\rm{nsec}$ is in good agreement with the usual phase qubit decay time, indicating low loss due to the additional isolation dielectric.

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