Pith. Sign in

RECORD

Spin-pumping-induced spin transport in p-type Si at room temperature

PaperPDF from arXiv

data files

Paper breakdownThe authors' claims, conditions and measurements, as JSON Signed receiptProof this review has not been altered
X Bluesky LinkedIn Reddit Hacker News
Eiji Shikoh, Kazuya Ando, Eiji Saito, Kazuki Kubo, Teruya Shinjo, Masashi Shiraishi (Osaka Univ. & Tohoku Univ., Japan)

Materials Science · Submitted 2 Jul 2011

abstract compiled · 2026-09-23 · no language-model review

The authors' main claim This approach demonstrates the generation and transport of pure spin current in p-Si at room temperature.

how it is stated · asserted 1.00 read the record →

Comment (0) Read on arXiv ↗
Cite ▾
arXiv ID1107.0376 (version 4)
Pith IDYSSD7KET, Pith's permanent record of this paper and its review
CitationEiji Saito, Eiji Shikoh, Japan), Kazuki Kubo, Kazuya Ando, Masashi Shiraishi (Osaka Univ. & Tohoku Univ., Teruya Shinjo. "Spin-pumping-induced spin transport in p-type Si at room temperature." arXiv:1107.0376 (2011). https://pith.science/paper/YSSD7KET
Claim paper

The compiled record

The paper's own sentences, arranged. Each label is drawn from a closed vocabulary; the number beside it is the probability the classifier gave that label. Numbers in the tables are the authors', checked by code. No sentence in this record was written by a model.

Open the compiled record

Compiled by classifier-1.13-20260917 via OpenRouter, question bank abstract-p1-20260923, 2026-09-23: 1 request, 3,599 input tokens, $0.0002 reported.

What the abstract itself states, as probabilities: claims first 0.04 · states limitation 0.05 · human participants 0.02 · controlled comparison 0.03 · randomized assignment 0.01 · states quantitative result 0.04 · compares with prior results 0.06 · mentions code or data availability 0.01.

The abstract, sentence by sentence

arXiv listing abstract v4. Results and the main claim are underlined; .

A spin battery concept is applied for the dynamical generation of pure spin current and spin transport in p-type silicon (p-Si). Ferromagnetic resonance and effective s-d coupling in Ni80Fe20 results in spin accumulation at the Ni80Fe20/p-Si interface, inducing spin injection and the generation of spin current in the p-Si. The pure spin current is converted to a charge current by the inverse spin Hall effect of Pd evaporated onto the p-Si. This approach demonstrates the generation and transport of pure spin current in p-Si at room temperature.

background contribution method result interpretation main claim

What the classifier reports for each sentence. The number is the probability it gave the label.
#sentencerolethe authors' own workstates the main conclusionstrength
s0 A spin battery concept is applied for the dynamical generation of pure spin current and spin transport in p-type silicon (p-Si). contribution 0.86 0.56 0.20 asserted 0.95
s1 Ferromagnetic resonance and effective s-d coupling in Ni80Fe20 results in spin accumulation at the Ni80Fe20/p-Si interface, inducing spin injection and the generation of spin current in the p-Si. method 0.67 0.63 0.10 asserted 1.00
s2 The pure spin current is converted to a charge current by the inverse spin Hall effect of Pd evaporated onto the p-Si. method 0.87 0.77 0.10 asserted 1.00
s3 This approach demonstrates the generation and transport of pure spin current in p-Si at room temperature. result 0.59 0.90 0.89 asserted 1.00

What kind of paper the classifier reports this is: empirical study 0.98 · evidence from observation or experiment 0.99.

What was examined, and what was not

sources read
  • arXiv listing abstract v4
not examined
  • full text
  • figures and tables
  • references and citing sentences
  • relations to other papers
levels run
  • P abstract
not run
  • S sections
  • T body sentences
  • C citations
  • R cross-paper relations

Every quoted sentence on this record is the authors'. Every label is from Pith's closed vocabulary, with the probability shown beside it. Every number in the measurements table is the authors', checked by code. Record as JSON

The paper
Original abstract

A spin battery concept is applied for the dynamical generation of pure spin current and spin transport in p-type silicon (p-Si). Ferromagnetic resonance and effective s-d coupling in Ni80Fe20 results in spin accumulation at the Ni80Fe20/p-Si interface, inducing spin injection and the generation of spin current in the p-Si. The pure spin current is converted to a charge current by the inverse spin Hall effect of Pd evaporated onto the p-Si. This approach demonstrates the generation and transport of pure spin current in p-Si at room temperature.

Human review

How Pith checks papers → · Full audit of this paper →

Discussion

Know something about this paper? Leave a comment, or highlight any passage above to comment on it.