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Doping of epitaxial graphene on SiC intercalated with hydrogen and its magneto-oscillations

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arxiv 1107.4769 v1 pith:SE6MMAIP submitted 2011-07-24 cond-mat.mtrl-sci

Doping of epitaxial graphene on SiC intercalated with hydrogen and its magneto-oscillations

S. Kopylov , V. I. Fal'ko , Th. Seyller This is my paper
classification cond-mat.mtrl-sci
keywords densitygrapheneacceptorhydrogenmagneto-oscillationsstatescarriercharge
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We study the charge transfer between a quasi-free-standing monolayer graphene, produced by hydrogen intercalation, and surface acceptor states. We consider two models of acceptor density of states to explain the high hole densities observed in graphene and find the density responsivity to the gate voltage. By studying magneto-oscillations of the carrier density we provide an experimental way to determine the relevant model.

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