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Comparison of microscopic models for disorder in bilayer graphene: Implications for the density of states and the optical conductivity

Mesoscale and Nanoscale Physics · Submitted 26 Sep 2011

abstract compiled · 2026-09-23 · no language-model review

The authors' main claim We find that the qualitative behavior of the two scattering potentials are similar, but that the choice of approximation for the self-energy leads to important differences near the band edge in the gapped case.

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arXiv ID1109.5702 (version 2)
Pith IDZ2ZX4RGM, Pith's permanent record of this paper and its review
CitationD. S. L. Abergel, E. H. Hwang, Hongki Min, S. Das Sarma. "Comparison of microscopic models for disorder in bilayer graphene: Implications for the density of states and the optical conductivity." arXiv:1109.5702 (2011). https://pith.science/paper/Z2ZX4RGM
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Compiled by classifier-1.13-20260917 via OpenRouter, question bank abstract-p1-20260923, 2026-09-23: 1 request, 4,277 input tokens, $0.0002 reported.

What the abstract itself states, as probabilities: claims first 0.02 · states limitation 0.25 · human participants 0.01 · controlled comparison 0.14 · randomized assignment 0.01 · states quantitative result 0.04 · compares with prior results 0.71 · mentions code or data availability 0.02.

The abstract, sentence by sentence

arXiv listing abstract v2. Results and the main claim are underlined; .

We study the effects of disorder on bilayer graphene using four different microscopic models and directly compare their results. We compute the self-energy, density of states, and optical conductivity in the presence of short-ranged scatterers and screened Coulomb impurities, using both the Born approximation and self-consistent Born approximation for the self-energy. We also include a finite interlayer potential asymmetry which generates a gap between the valence and conduction bands. We find that the qualitative behavior of the two scattering potentials are similar, but that the choice of approximation for the self-energy leads to important differences near the band edge in the gapped case. Finally, we describe how these differences manifest in the measurement of the band gap in optical and transport experimental techniques.

background contribution method result interpretation main claim

What the classifier reports for each sentence. The number is the probability it gave the label.
#sentencerolethe authors' own workstates the main conclusionstrength
s0 We study the effects of disorder on bilayer graphene using four different microscopic models and directly compare their results. contribution 0.99 0.95 0.04 asserted 0.89
s1 We compute the self-energy, density of states, and optical conductivity in the presence of short-ranged scatterers and screened Coulomb impurities, using both the Born approximation and self-consistent Born approximation for the self-energy. method 0.98 0.96 0.04 asserted 0.96
s2 We also include a finite interlayer potential asymmetry which generates a gap between the valence and conduction bands. method 0.90 0.88 0.03 asserted 0.99
s3 We find that the qualitative behavior of the two scattering potentials are similar, but that the choice of approximation for the self-energy leads to important differences near the band edge in the gapped case. result 0.99 0.96 0.77 asserted 1.00
s4 Finally, we describe how these differences manifest in the measurement of the band gap in optical and transport experimental techniques. interpretation 0.87 0.87 0.18 asserted 0.96

What kind of paper the classifier reports this is: simulation study 0.69 · evidence from simulation or computation 0.98.

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Every quoted sentence on this record is the authors'. Every label is from Pith's closed vocabulary, with the probability shown beside it. Every number in the measurements table is the authors', checked by code. Record as JSON

The paper
Original abstract

We study the effects of disorder on bilayer graphene using four different microscopic models and directly compare their results. We compute the self-energy, density of states, and optical conductivity in the presence of short-ranged scatterers and screened Coulomb impurities, using both the Born approximation and self-consistent Born approximation for the self-energy. We also include a finite interlayer potential asymmetry which generates a gap between the valence and conduction bands. We find that the qualitative behavior of the two scattering potentials are similar, but that the choice of approximation for the self-energy leads to important differences near the band edge in the gapped case. Finally, we describe how these differences manifest in the measurement of the band gap in optical and transport experimental techniques.

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1 arXiv paper cite this in 1 sentence

Each citing sentence is taken from the citing paper's LaTeX source and typed by Pith's classifier. A label appears at probability 0.8 or more (0.95 for support), a contest at 0.7 or more; the quoted words are the citing authors'. How each label was checked · JSON

Papers citing it

Uses its method or tool 1 paper
  • We include the disorder through a constant broadening of the bands parameterized by the energy $Γ$ which appears in the Green's function as [equation] The optical conductivity is calculated from this Green's function from the following expression [ref] : [equation] where $g_s$ and $g_v$ are the spin and valley degeneracies, and [equation] Figure [ref] shows that for $Γ=1$, the peak due to the onset of the intraband conductivity is already significantly blurred.

    dmu/dn In suspended bilayer graphene: the interplay of disorder and band gap · Introduction · 0.92

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