REVIEW
Diffusion at the Surface of Topological Insulators
Not yet reviewed by Pith; the record is open.
This paper has not been read by Pith yet. Machine review is queued; the pith claim, tier, and objections will appear here once it completes.
SPECIMEN: schema-true, not a live event
T0 review · schema-true
One-sentence machine reading of the paper's core claim.
pith:XXXXXXXX · record.json · timestamp
Diffusion at the Surface of Topological Insulators
read the original abstract
We consider the transport properties of topological insulators surface states in the presence of uncorrelated point-like disorder, both in the classical and quantum regimes. The transport properties of those two-dimensional surface states depend strongly on the amplitude of the hexagonal warping of their Fermi surface. It is shown that a perturbative analysis of the warping fails to describe the transport in experimentally available topological insulators, such as Bi2Se3 and Bi2Te3. Hence we develop a fully non-perturbative description of these effects. In particular, we find that the dependence of the warping amplitude on the Fermi energy manifests itself in a strong dependence of the diffusion constant on this Fermi energy, leading to several important experimental consequences. Moreover, the combination of a strong warping with an in plane Zeeman effect leads to an attenuation of conductance fluctuations in contrast to the situation of unwarped Dirac surface states.
discussion (0)
Sign in with ORCID, Apple, or X to comment. Anyone can read and Pith papers without signing in.