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Quantum transport of pseudospin-polarized Dirac fermions in gapped graphene nanostructures
Mesoscale and Nanoscale Physics · Submitted 17 Dec 2012
abstract compiled · 2026-09-23 · no language-model review
The authors' main claim Our results show that the gapped normal graphene behaves like a ferromagnetic graphene and the effect of the pseudospin degree of freedom in gapped graphene is as important as the spin in a ferromagnetic graphene.
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The abstract, sentence by sentence
We investigate the unusual features of the quantum transport in gapped monolayer graphene, which is in a pseudospin symmetry-broken state with a net perpendicular pseudomagnetization. Using these pseudoferromagnets (PFs), we propose a perfect pseudospin valve effect that can be used for realizing pseudospintronics in monolayer graphene. The peculiarity of the associated effects of pseudo spin injection and pseudo spin accumulation are also studied. We further demonstrate the determining effect of the sublattice pseudospin degree of freedom on Andreev reflection and the associated proximity effect in hybrid structures of PFs and a superconductor in S/PF and PF/S/PF geometries. In particular, we find a peculiar Andreev reflection that is associated with an inversion of the z component of the carriers pseudospin vector. Our results show that the gapped normal graphene behaves like a ferromagnetic graphene and the effect of the pseudospin degree of freedom in gapped graphene is as important as the spin in a ferromagnetic graphene.
background contribution method result interpretation main claim
| # | sentence | role | the authors' own work | states the main conclusion | strength |
|---|---|---|---|---|---|
| s0 | We investigate the unusual features of the quantum transport in gapped monolayer graphene, which is in a pseudospin symmetry-broken state with a net perpendicular pseudomagnetization. | contribution 0.85 | 0.56 | 0.08 | asserted 0.95 |
| s1 | Using these pseudoferromagnets (PFs), we propose a perfect pseudospin valve effect that can be used for realizing pseudospintronics in monolayer graphene. | contribution 0.85 | 0.63 | 0.33 | hedged possibility 0.59 |
| s2 | The peculiarity of the associated effects of pseudo spin injection and pseudo spin accumulation are also studied. | contribution 0.99 | 0.86 | 0.05 | asserted 0.70 |
| s3 | We further demonstrate the determining effect of the sublattice pseudospin degree of freedom on Andreev reflection and the associated proximity effect in hybrid structures of PFs and a superconductor in S/PF and PF/S/PF geometries. | contribution 0.95 | 0.93 | 0.11 | asserted 1.00 |
| s4 | In particular, we find a peculiar Andreev reflection that is associated with an inversion of the z component of the carriers pseudospin vector. | result 1.00 | 0.95 | 0.13 | asserted 1.00 |
| s5 | Our results show that the gapped normal graphene behaves like a ferromagnetic graphene and the effect of the pseudospin degree of freedom in gapped graphene is as important as the spin in a ferromagnetic graphene. | interpretation 0.90 | 0.92 | 0.68 | asserted 1.00 |
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The paper
Original abstract
We investigate the unusual features of the quantum transport in gapped monolayer graphene, which is in a pseudospin symmetry-broken state with a net perpendicular pseudomagnetization. Using these pseudoferromagnets (PFs), we propose a perfect pseudospin valve effect that can be used for realizing pseudospintronics in monolayer graphene. The peculiarity of the associated effects of pseudo spin injection and pseudo spin accumulation are also studied. We further demonstrate the determining effect of the sublattice pseudospin degree of freedom on Andreev reflection and the associated proximity effect in hybrid structures of PFs and a superconductor in S/PF and PF/S/PF geometries. In particular, we find a peculiar Andreev reflection that is associated with an inversion of the z component of the carriers pseudospin vector. Our results show that the gapped normal graphene behaves like a ferromagnetic graphene and the effect of the pseudospin degree of freedom in gapped graphene is as important as the spin in a ferromagnetic graphene.
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