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Progress Towards Opto-Electronic Characterization of Indium Phosphide Nanowire Transistors at milli-Kelvin temperatures

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arxiv 1303.2771 v1 pith:FUVGTGOG submitted 2013-03-12 cond-mat.mes-hall

Progress Towards Opto-Electronic Characterization of Indium Phosphide Nanowire Transistors at milli-Kelvin temperatures

Laurens H. Willems van Beveren , Jeffrey C. McCallum , Hoe H. Tan , Chennupati Jagadish This is my paper
classification cond-mat.mes-hall
keywords characterizationopto-electronicindiummilli-kelvinnanowirephosphideprogresstemperature
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In this paper we present our progress towards the opto-electronic characterization of indium phosphide (InP) nanowire transistors at milli-Kelvin (mK) temperatures. First, we have investigated the electronic transport of the InP nanowires by current-voltage (I-V) spectroscopy as a function of temperature from 300 K down to 40 K. Second, we show the successful operation of a red light emitting diode (LED) at liquid-Helium (and base) temperature to be used for opto-electronic device characterization.

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