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Centers of near-infrared luminescence in bismuth-doped TlCl and CsI crystals

Materials Science · Submitted 10 Apr 2013

abstract compiled · 2026-09-23 · no language-model review

The authors' main claim The calculated spectral properties of the bismuth centers suggest that the IR luminescence observed in TlCl:Bi is most likely caused by Bi--Vac(Cl) centers (Bi^+ ion in thallium site and a negatively charged chlorine vacancy in the nearest anion site).

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arXiv ID1304.2966 (version 1)
Pith ID4YLZX4V2, Pith's permanent record of this paper and its review
CitationE.M. Dianov, V.G. Plotnichenko, V.O. Sokolov. "Centers of near-infrared luminescence in bismuth-doped TlCl and CsI crystals." arXiv:1304.2966 (2013). https://pith.science/paper/4YLZX4V2
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The paper's own sentences, arranged. Each label is drawn from a closed vocabulary; the number beside it is the probability the classifier gave that label. Numbers in the tables are the authors', checked by code. No sentence in this record was written by a model.

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Compiled by classifier-1.13-20260917 via OpenRouter, question bank abstract-p1-20260923, 2026-09-23: 1 request, 3,066 input tokens, $0.0001 reported.

What the abstract itself states, as probabilities: claims first 0.17 · states limitation 0.09 · human participants 0.02 · controlled comparison 0.09 · randomized assignment 0.01 · states quantitative result 0.05 · compares with prior results 0.81 · mentions code or data availability 0.02.

The abstract, sentence by sentence

arXiv listing abstract v1. Results and the main claim are underlined; .

A comparative first-principles study of possible bismuth-related centers in TlCl and CsI crystals is performed and the results of computer modeling are compared with the experimental data. The calculated spectral properties of the bismuth centers suggest that the IR luminescence observed in TlCl:Bi is most likely caused by Bi--Vac(Cl) centers (Bi^+ ion in thallium site and a negatively charged chlorine vacancy in the nearest anion site). On the contrary, Bi^+ substitutional ions and Bi_2^+ dimers are most likely responsible for the IR luminescence observed in CsI:Bi.

background contribution method result interpretation main claim

What the classifier reports for each sentence. The number is the probability it gave the label.
#sentencerolethe authors' own workstates the main conclusionstrength
s0 A comparative first-principles study of possible bismuth-related centers in TlCl and CsI crystals is performed and the results of computer modeling are compared with the experimental data. contribution 0.86 0.94 0.06 asserted 0.94
s1 The calculated spectral properties of the bismuth centers suggest that the IR luminescence observed in TlCl:Bi is most likely caused by Bi--Vac(Cl) centers (Bi^+ ion in thallium site and a negatively charged chlorine vacancy in the nearest anion site). interpretation 0.77 0.90 0.33 hedged possibility 0.99
s2 On the contrary, Bi^+ substitutional ions and Bi_2^+ dimers are most likely responsible for the IR luminescence observed in CsI:Bi. interpretation 0.59 0.84 0.22 hedged possibility 0.99

What kind of paper the classifier reports this is: simulation study 1.00 · evidence from simulation or computation 1.00.

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Every quoted sentence on this record is the authors'. Every label is from Pith's closed vocabulary, with the probability shown beside it. Every number in the measurements table is the authors', checked by code. Record as JSON

The paper
Original abstract

A comparative first-principles study of possible bismuth-related centers in TlCl and CsI crystals is performed and the results of computer modeling are compared with the experimental data. The calculated spectral properties of the bismuth centers suggest that the IR luminescence observed in TlCl:Bi is most likely caused by Bi--Vac(Cl) centers (Bi^+ ion in thallium site and a negatively charged chlorine vacancy in the nearest anion site). On the contrary, Bi^+ substitutional ions and Bi_2^+ dimers are most likely responsible for the IR luminescence observed in CsI:Bi.

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