Surface-Roughness-Limited Mean Free Path in Si Nanowire FETs

Hyo-Eun Jung; Mincheol Shin

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Surface-Roughness-Limited Mean Free Path in Si Nanowire FETs

Hyo-Eun Jung, Mincheol Shin

Mesoscale and Nanoscale Physics · Submitted 20 Apr 2013

abstract compiled · 2026-09-23 · no language-model review

The authors' main claim Our major findings are that the single parameter, RMS/W, can be used as a good measure for the strength of the SRS effects and that the overall characteristics of the MFP are determined by the parameter.

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Compiled by classifier-1.13-20260917 via OpenRouter, question bank abstract-p1-20260923, 2026-09-23: 1 request, 4,458 input tokens, $0.0002 reported.

What the abstract itself states, as probabilities: claims first 0.04 · states limitation 0.19 · human participants 0.01 · controlled comparison 0.05 · randomized assignment 0.01 · states quantitative result 0.97 · compares with prior results 0.08 · mentions code or data availability 0.02.

The abstract, sentence by sentence

arXiv listing abstract v1. Results and the main claim are underlined; show every role.

The mean free path (MFP) in silicon nanowire field effect transistors limited by surface roughness scattering (SRS) is calculated with the non-perturbative approach utilizing the non-equilibrium Green's function method. The entrance scattering effect associated with finiteness of the channel length is identified and a method to eliminate it in the calculation of the MFP is developed. The behavior of the MFP with respect to channel length (L), channel width (W), and the root-mean-square (RMS) of the surface roughness is investigated extensively. Our major findings are that the single parameter, RMS/W, can be used as a good measure for the strength of the SRS effects and that the overall characteristics of the MFP are determined by the parameter. In particular, the MFP exponentially decreases with the increase of RMS/W and the MFP versus the gate electric field shows a distinctively different behavior depending on whether the strength of the SRS effects measured by RMS/W is smaller or greater than 0.06.

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What the classifier reports for each sentence. The number is the probability it gave the label.
#	sentence	role	the authors' own work	states the main conclusion	strength
s0	The mean free path (MFP) in silicon nanowire field effect transistors limited by surface roughness scattering (SRS) is calculated with the non-perturbative approach utilizing the non-equilibrium Green's function method.	method 0.80	0.91	0.03	asserted 1.00
s1	The entrance scattering effect associated with finiteness of the channel length is identified and a method to eliminate it in the calculation of the MFP is developed.	contribution 0.60	0.94	0.04	asserted 1.00
s2	The behavior of the MFP with respect to channel length (L), channel width (W), and the root-mean-square (RMS) of the surface roughness is investigated extensively.	contribution 0.86	0.92	0.03	asserted 0.94
s3	Our major findings are that the single parameter, RMS/W, can be used as a good measure for the strength of the SRS effects and that the overall characteristics of the MFP are determined by the parameter.	result 0.91	0.96	0.94	asserted 0.99
s4	In particular, the MFP exponentially decreases with the increase of RMS/W and the MFP versus the gate electric field shows a distinctively different behavior depending on whether the strength of the SRS effects measured by RMS/W is smaller or greater than 0.06.	result 1.00	0.94	0.43	asserted 1.00

What kind of paper the classifier reports this is: simulation study 0.78 · evidence from simulation or computation 1.00.

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Every quoted sentence on this record is the authors'. Every label is from Pith's closed vocabulary, with the probability shown beside it. Every number in the measurements table is the authors', checked by code. Record as JSON

The paper

Original abstract

The mean free path (MFP) in silicon nanowire field effect transistors limited by surface roughness scattering (SRS) is calculated with the non-perturbative approach utilizing the non-equilibrium Green's function method. The entrance scattering effect associated with finiteness of the channel length is identified and a method to eliminate it in the calculation of the MFP is developed. The behavior of the MFP with respect to channel length (L), channel width (W), and the root-mean-square (RMS) of the surface roughness is investigated extensively. Our major findings are that the single parameter, RMS/W, can be used as a good measure for the strength of the SRS effects and that the overall characteristics of the MFP are determined by the parameter. In particular, the MFP exponentially decreases with the increase of RMS/W and the MFP versus the gate electric field shows a distinctively different behavior depending on whether the strength of the SRS effects measured by RMS/W is smaller or greater than 0.06.

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