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Fano resonance in Raman scattering of graphene

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arxiv 1305.5589 v1 pith:MDFMM7GX submitted 2013-05-24 cond-mat.mes-hall

Fano resonance in Raman scattering of graphene

Duhee Yoon , Dongchan Jeong , Hu-Jong Lee , Riichiro Saito , Young-Woo Son , Hyun Cheol Lee , Hyeonsik Cheong This is my paper
classification cond-mat.mes-hall
keywords fanoresonancegrapheneramanbanddopingexcitonicline
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Fano resonances and their strong doping dependence are observed in Raman scattering of single-layer graphene (SLG). As the Fermi level is varied by a back-gate bias, the Raman G band of SLG exhibits an asymmetric line shape near the charge neutrality point as a manifestation of a Fano resonance, whereas the line shape is symmetric when the graphene sample is electron or hole doped. However, the G band of bilayer graphene (BLG) does not exhibit any Fano resonance regardless of doping. The observed Fano resonance can be interpreted as interferences between the phonon and excitonic many-body spectra in SLG. The absence of a Fano resonance in the Raman G band of BLG can be explained in the same framework since excitonic interactions are not expected in BLG.

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