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Silicon avalanche photodiode operation and lifetime analysis for small satellites

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arxiv 1306.6773 v1 pith:FB7CF25J submitted 2013-06-28 physics.ins-det quant-ph

Silicon avalanche photodiode operation and lifetime analysis for small satellites

classification physics.ins-det quant-ph
keywords analysisapdsavalancheexpectedfluctuationsirradiationlifetimesilicon
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
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Silicon avalanche photodiodes (APDs) are sensitive to operating temperature fluctuations and are also susceptible to radiation flux expected in satellite-based quantum experiments. We introduce a low power voltage adjusting mechanism to overcome the effects of in-orbit temperature fluctuations. We also present data on the performance of Si APDs after irradiation (gamma-ray and proton beam). Combined with an analysis of expected orbital irradiation, we propose that a Si APD in a 400 km equatorial orbit may operate beyond the lifetime of the satellite.

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