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Exploring semiconductor substrates for Silicene epitaxy

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arxiv 1308.5004 v1 pith:5N67YO7R submitted 2013-08-22 cond-mat.mtrl-sci

Exploring semiconductor substrates for Silicene epitaxy

classification cond-mat.mtrl-sci
keywords metalsiliceneterminateddopingoverlayerpropertiessemiconductorsubstrate
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
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We have carried out first-principles based DFT calculation on electronic properties of silicene monolayer on various (111) semi-conducting surfaces. We find that the relative stability and other properties of the silicene overlayer depends sensitively on whether the interacting top layer of the substrate is metal or non-metal terminated. The nature of silicene-monolayer on the metal termi- nated surface can be metallic or even magnetic, depending upon the choice of the substrate. The silicene overlayer undergoes n-type doping on metal terminated surface while it undergoes p-type doping on non metal terminated surfaces of the semiconductor substrates.

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