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Point defects and p-type conductivity in Zn/1-x/Mn/x/GeAs/2/

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L. Kilanski, C. Rauch, F. Tuomisto, A. Podgorni, E. Dynowska, W. Dobrowolski, I.V. Fedorchenko, S.F. Marenkin

Materials Science · Submitted 4 Apr 2014

abstract compiled · 2026-09-23 · no language-model review

The authors' main claim Therefore, we suggest that other types of defects, such as extended defects, have a strong influence on the conductivity of Zn1-xMnxGeAs2 crystals.

how it is stated · hedged possibility 0.95 read the record →

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arXiv ID1404.1179 (version 1)
Pith ID6QEZL34G, Pith's permanent record of this paper and its review
CitationA. Podgorni, C. Rauch, E. Dynowska, F. Tuomisto, I.V. Fedorchenko, L. Kilanski, S.F. Marenkin, W. Dobrowolski. "Point defects and p-type conductivity in Zn/1-x/Mn/x/GeAs/2/." arXiv:1404.1179 (2014). https://pith.science/paper/6QEZL34G
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The compiled record

The paper's own sentences, arranged. Each label is drawn from a closed vocabulary; the number beside it is the probability the classifier gave that label. Numbers in the tables are the authors', checked by code. No sentence in this record was written by a model.

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Compiled by classifier-1.13-20260917 via OpenRouter, question bank abstract-p1-20260923, 2026-09-23: 1 request, 4,415 input tokens, $0.0002 reported.

What the abstract itself states, as probabilities: claims first 0.02 · states limitation 0.90 · human participants 0.01 · controlled comparison 0.06 · randomized assignment 0.01 · states quantitative result 0.98 · compares with prior results 0.11 · mentions code or data availability 0.01.

The abstract, sentence by sentence

arXiv listing abstract v1. Results and the main claim are underlined; .

Positron annihilation spectroscopy is used to study point defects in Zn/1-x/Mn/x/GeAs/2/ crystals with low Mn content 0 < x < 0.042 with disordered zincblende and chalcopyrite structure. The role of negatively charged vacancies and non-open-volume defects is discussed with respect to the high p-type conductivity with carrier concentration 1E19 < n < 1E21 cm^-3 in our samples. Neutral As vacancies, together with negatively charged Zn vacancies and non-open-volume defects with concentrations around 1E16-1E18 cm^-3, increasing with the amount of Mn in the alloy, are observed. The observed concentrations of defects are not sufficient to be responsible for the strong p-type conductivity of our crystals. Therefore, we suggest that other types of defects, such as extended defects, have a strong influence on the conductivity of Zn1-xMnxGeAs2 crystals.

background contribution method result interpretation main claim

What the classifier reports for each sentence. The number is the probability it gave the label.
#sentencerolethe authors' own workstates the main conclusionstrength
s0 Positron annihilation spectroscopy is used to study point defects in Zn/1-x/Mn/x/GeAs/2/ crystals with low Mn content 0 < x < 0.042 with disordered zincblende and chalcopyrite structure. method 0.56 0.93 0.03 asserted 0.99
s1 The role of negatively charged vacancies and non-open-volume defects is discussed with respect to the high p-type conductivity with carrier concentration 1E19 < n < 1E21 cm^-3 in our samples. interpretation 0.64 0.70 0.05 asserted 0.67
s2 Neutral As vacancies, together with negatively charged Zn vacancies and non-open-volume defects with concentrations around 1E16-1E18 cm^-3, increasing with the amount of Mn in the alloy, are observed. result 1.00 0.94 0.08 asserted 1.00
s3 The observed concentrations of defects are not sufficient to be responsible for the strong p-type conductivity of our crystals. interpretation 0.62 0.91 0.31 asserted 1.00
s4 Therefore, we suggest that other types of defects, such as extended defects, have a strong influence on the conductivity of Zn1-xMnxGeAs2 crystals. interpretation 0.99 0.45 0.73 hedged possibility 0.95

What kind of paper the classifier reports this is: empirical study 1.00 · evidence from observation or experiment 1.00.

What was examined, and what was not

sources read
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not examined
  • full text
  • figures and tables
  • references and citing sentences
  • relations to other papers
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  • P abstract
not run
  • S sections
  • T body sentences
  • C citations
  • R cross-paper relations

Every quoted sentence on this record is the authors'. Every label is from Pith's closed vocabulary, with the probability shown beside it. Every number in the measurements table is the authors', checked by code. Record as JSON

The paper
Original abstract

Positron annihilation spectroscopy is used to study point defects in Zn/1-x/Mn/x/GeAs/2/ crystals with low Mn content 0 < x < 0.042 with disordered zincblende and chalcopyrite structure. The role of negatively charged vacancies and non-open-volume defects is discussed with respect to the high p-type conductivity with carrier concentration 1E19 < n < 1E21 cm^-3 in our samples. Neutral As vacancies, together with negatively charged Zn vacancies and non-open-volume defects with concentrations around 1E16-1E18 cm^-3, increasing with the amount of Mn in the alloy, are observed. The observed concentrations of defects are not sufficient to be responsible for the strong p-type conductivity of our crystals. Therefore, we suggest that other types of defects, such as extended defects, have a strong influence on the conductivity of Zn1-xMnxGeAs2 crystals.

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