RECORD
Effect of high pressure annealing on the normal state transport of LaO0.5F0.5BiS2
Superconductivity · Submitted 15 May 2014
abstract compiled · 2026-09-23 · no language-model review
The authors' main claim Our results point out the dramatic effect of preparation conditions in affecting charge carrier density as well as structural, band and electronic parameters in these systems.
The compiled record
The paper's own sentences, arranged. Each label is drawn from a closed vocabulary; the number beside it is the probability the classifier gave that label. Numbers in the tables are the authors', checked by code. No sentence in this record was written by a model.
Open the compiled record
The abstract, sentence by sentence
We study normal state electrical, thermoelectrical and thermal transport in polycrystalline BiS2-based compounds, which become superconducting by F doping on the O site. In particular we explore undoped LaOBiS2 and doped LaO0.5F0.5BiS2 samples, prepared either with or without high pressure annealing, in order to evidence the roles of doping and preparation conditions. The high pressure annealed sample exhibits room temperature values of resistivity ro around 5 mohmcm, Seebeck coefficient S around -20 microV/K and thermal conductivity k around 1.5 W/Km, while the Hall resistance RH is negative at all temperatures and its value is -10-8 m3/C at low temperature. The sample prepared at ambient pressure exhibits RH positive in sign and five times larger in magnitude, and S negative in sign and slightly smaller in magnitude. These results reveal a complex multiband evolution brought about by high pressure annealing. In particular, the sign inversion and magnitude suppression of RH, indicating increased electron-type carrier density in the high pressure sample, may be closely related to previous findings about change in lattice parameters and enhancement of superconducting Tc by high pressure annealing. As for the undoped sample, it exhibits the 10 times larger resistivity, 10 times larger |S| and 10 times larger |RH| than its doped counterpart, consistently with its insulating nature. Our results point out the dramatic effect of preparation conditions in affecting charge carrier density as well as structural, band and electronic parameters in these systems.
background contribution method result interpretation main claim
| # | sentence | role | the authors' own work | states the main conclusion | strength |
|---|---|---|---|---|---|
| s0 | We study normal state electrical, thermoelectrical and thermal transport in polycrystalline BiS2-based compounds, which become superconducting by F doping on the O site. | contribution 0.78 | 0.73 | 0.04 | asserted 0.99 |
| s1 | In particular we explore undoped LaOBiS2 and doped LaO0.5F0.5BiS2 samples, prepared either with or without high pressure annealing, in order to evidence the roles of doping and preparation conditions. | contribution 0.76 | 0.85 | 0.04 | asserted 0.83 |
| s2 | The high pressure annealed sample exhibits room temperature values of resistivity ro around 5 mohmcm, Seebeck coefficient S around -20 microV/K and thermal conductivity k around 1.5 W/Km, while the Hall resistance RH is negative at all temperatures and its value is -10-8 m3/C at low temperature. | result 1.00 | 0.95 | 0.07 | asserted 1.00 |
| s3 | The sample prepared at ambient pressure exhibits RH positive in sign and five times larger in magnitude, and S negative in sign and slightly smaller in magnitude. | result 1.00 | 0.94 | 0.05 | asserted 1.00 |
| s4 | These results reveal a complex multiband evolution brought about by high pressure annealing. | interpretation 0.96 | 0.84 | 0.38 | asserted 1.00 |
| s5 | In particular, the sign inversion and magnitude suppression of RH, indicating increased electron-type carrier density in the high pressure sample, may be closely related to previous findings about change in lattice parameters and enhancement of superconducting Tc by high pressure annealing. | interpretation 1.00 | 0.48 | 0.29 | hedged possibility 1.00 |
| s6 | As for the undoped sample, it exhibits the 10 times larger resistivity, 10 times larger |S| and 10 times larger |RH| than its doped counterpart, consistently with its insulating nature. | result 0.99 | 0.94 | 0.09 | asserted 0.75 |
| s7 | Our results point out the dramatic effect of preparation conditions in affecting charge carrier density as well as structural, band and electronic parameters in these systems. | interpretation 1.00 | 0.88 | 0.75 | asserted 0.86 |
What was examined, and what was not
- arXiv listing abstract v2
- full text
- figures and tables
- references and citing sentences
- relations to other papers
- P abstract
- S sections
- T body sentences
- C citations
- R cross-paper relations
The paper
Original abstract
We study normal state electrical, thermoelectrical and thermal transport in polycrystalline BiS2-based compounds, which become superconducting by F doping on the O site. In particular we explore undoped LaOBiS2 and doped LaO0.5F0.5BiS2 samples, prepared either with or without high pressure annealing, in order to evidence the roles of doping and preparation conditions. The high pressure annealed sample exhibits room temperature values of resistivity ro around 5 mohmcm, Seebeck coefficient S around -20 microV/K and thermal conductivity k around 1.5 W/Km, while the Hall resistance RH is negative at all temperatures and its value is -10-8 m3/C at low temperature. The sample prepared at ambient pressure exhibits RH positive in sign and five times larger in magnitude, and S negative in sign and slightly smaller in magnitude. These results reveal a complex multiband evolution brought about by high pressure annealing. In particular, the sign inversion and magnitude suppression of RH, indicating increased electron-type carrier density in the high pressure sample, may be closely related to previous findings about change in lattice parameters and enhancement of superconducting Tc by high pressure annealing. As for the undoped sample, it exhibits the 10 times larger resistivity, 10 times larger |S| and 10 times larger |RH| than its doped counterpart, consistently with its insulating nature. Our results point out the dramatic effect of preparation conditions in affecting charge carrier density as well as structural, band and electronic parameters in these systems.
Human review
Discussion
Know something about this paper? Leave a comment, or highlight any passage above to comment on it.