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Large anomalous Hall effect in ferromagnetic insulator-topological insulator heterostructures
Mesoscale and Nanoscale Physics · Submitted 5 Jul 2014
abstract compiled · 2026-09-23 · no language-model review
The authors' main claim At low temperatures, bilayers consisting of Bi2Te3 on Cr2Ge2Te6 exhibit a large anomalous Hall effect (AHE).
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The abstract, sentence by sentence
We demonstrate the van der Waals epitaxy of the topological insulator compound Bi2Te3 on the ferromagnetic insulator Cr2Ge2Te6. The layers are oriented with (001) of Bi2Te3 parallel to (001) of Cr2Ge2Te6 and (110) of Bi2Te3 parallel to (100) of Cr2Ge2Te6. Cross-sectional transmission electron microscopy indicates the formation of a sharp interface. At low temperatures, bilayers consisting of Bi2Te3 on Cr2Ge2Te6 exhibit a large anomalous Hall effect (AHE). Tilted field studies of the AHE indicate that the easy axis lies along the c-axis of the heterostructure, consistent with magnetization measurements in bulk Cr2Ge2Te6. The 61 K Curie temperature of Cr2Ge2Te6 and the use of near-stoichiometric materials may lead to the development of spintronic devices based on the AHE.
background contribution method result interpretation main claim
| # | sentence | role | the authors' own work | states the main conclusion | strength |
|---|---|---|---|---|---|
| s0 | We demonstrate the van der Waals epitaxy of the topological insulator compound Bi2Te3 on the ferromagnetic insulator Cr2Ge2Te6. | contribution 0.77 | 0.95 | 0.08 | asserted 1.00 |
| s1 | The layers are oriented with (001) of Bi2Te3 parallel to (001) of Cr2Ge2Te6 and (110) of Bi2Te3 parallel to (100) of Cr2Ge2Te6. | method 0.62 | 0.84 | 0.03 | asserted 1.00 |
| s2 | Cross-sectional transmission electron microscopy indicates the formation of a sharp interface. | result 0.63 | 0.91 | 0.03 | hedged possibility 0.80 |
| s3 | At low temperatures, bilayers consisting of Bi2Te3 on Cr2Ge2Te6 exhibit a large anomalous Hall effect (AHE). | result 1.00 | 0.92 | 0.64 | asserted 1.00 |
| s4 | Tilted field studies of the AHE indicate that the easy axis lies along the c-axis of the heterostructure, consistent with magnetization measurements in bulk Cr2Ge2Te6. | result 0.76 | 0.89 | 0.15 | hedged possibility 0.71 |
| s5 | The 61 K Curie temperature of Cr2Ge2Te6 and the use of near-stoichiometric materials may lead to the development of spintronic devices based on the AHE. | interpretation 0.76 | 0.24 | 0.26 | hedged possibility 1.00 |
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Original abstract
We demonstrate the van der Waals epitaxy of the topological insulator compound Bi2Te3 on the ferromagnetic insulator Cr2Ge2Te6. The layers are oriented with (001) of Bi2Te3 parallel to (001) of Cr2Ge2Te6 and (110) of Bi2Te3 parallel to (100) of Cr2Ge2Te6. Cross-sectional transmission electron microscopy indicates the formation of a sharp interface. At low temperatures, bilayers consisting of Bi2Te3 on Cr2Ge2Te6 exhibit a large anomalous Hall effect (AHE). Tilted field studies of the AHE indicate that the easy axis lies along the c-axis of the heterostructure, consistent with magnetization measurements in bulk Cr2Ge2Te6. The 61 K Curie temperature of Cr2Ge2Te6 and the use of near-stoichiometric materials may lead to the development of spintronic devices based on the AHE.
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Cites as background 2 papers
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[ref] Recently, independent experimental groups [ref] have detected the quantum anomalous Hall effect (QAHE) in thin films of magnetically doped topological insulators, in which the upper and lower surfaces are ferromagnetically gapped.
Scale-Invariant Dissipationless Chiral Transport in Magnetic Topological Insulators beyond the Two-Dimensional Limit · Introduction · 0.81
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[ref] Recently, independent experimental groups [ref] have detected the quantum anomalous Hall effect (QAHE) in thin films of magnetically doped topological insulators, in which the upper and lower surfaces are ferromagnetically gapped.
Trajectory of Anomalous Hall Effect toward the Quantized State in a Ferromagnetic Topological Insulator · Introduction · 0.81
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