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3D full-band, Atomistic Quantum transport in n-Si Junction less Nanowire field-effect transistors

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Bhupesh Bishnoi, Bahniman Ghosh

Materials Science · Submitted 26 Aug 2014

abstract compiled · 2026-09-23 · no language-model review

The authors' main claim We have investigated the IDS VGS transfer characteristics, IDS VDS output characteristics, ON current, OFF current leakage, subthreshold swing and energy position resolved electron density spectrum Gn x, E in n Si junction less nanowire field effect transistors.

how it is stated · asserted 0.98 read the record →

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arXiv ID1408.6003 (version 1)
Pith ID33D54UZZ, Pith's permanent record of this paper and its review
CitationBahniman Ghosh, Bhupesh Bishnoi. "3D full-band, Atomistic Quantum transport in n-Si Junction less Nanowire field-effect transistors." arXiv:1408.6003 (2014). https://pith.science/paper/33D54UZZ
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The compiled record

The paper's own sentences, arranged. Each label is drawn from a closed vocabulary; the number beside it is the probability the classifier gave that label. Numbers in the tables are the authors', checked by code. No sentence in this record was written by a model.

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Compiled by classifier-1.13-20260917 via OpenRouter, question bank abstract-p1-20260923, 2026-09-23: 1 request, 3,734 input tokens, $0.0002 reported.

What the abstract itself states, as probabilities: claims first 0.03 · states limitation 0.05 · human participants 0.01 · controlled comparison 0.10 · randomized assignment 0.01 · states quantitative result 0.05 · compares with prior results 0.07 · mentions code or data availability 0.02.

The abstract, sentence by sentence

arXiv listing abstract v1. Results and the main claim are underlined; .

In the present work, we have investigated the quantum transport in n Si junction less nanowire field effect transistors using 3 D, full band atomistic sp3d5s spin orbital coupled tight binding method. We have investigated the IDS VGS transfer characteristics, IDS VDS output characteristics, ON current, OFF current leakage, subthreshold swing and energy position resolved electron density spectrum Gn x, E in n Si junction less nanowire field effect transistors. We also study IDS VGS transfer characteristics with variation of High K gate materials. Quantum mechanical simulation is performed on the basis of Non Equilibrium Green Function formalism to solve coupled Poisson Schr "odinger equation self consistently for potentials and local density of state in n Si junction less nanowire field effect transistors.

background contribution method result interpretation main claim

What the classifier reports for each sentence. The number is the probability it gave the label.
#sentencerolethe authors' own workstates the main conclusionstrength
s0 In the present work, we have investigated the quantum transport in n Si junction less nanowire field effect transistors using 3 D, full band atomistic sp3d5s spin orbital coupled tight binding method. contribution 0.69 0.95 0.06 asserted 0.98
s1 We have investigated the IDS VGS transfer characteristics, IDS VDS output characteristics, ON current, OFF current leakage, subthreshold swing and energy position resolved electron density spectrum Gn x, E in n Si junction less nanowire field effect transistors. contribution 0.93 0.94 0.06 asserted 0.98
s2 We also study IDS VGS transfer characteristics with variation of High K gate materials. contribution 0.98 0.93 0.04 asserted 0.97
s3 Quantum mechanical simulation is performed on the basis of Non Equilibrium Green Function formalism to solve coupled Poisson Schr "odinger equation self consistently for potentials and local density of state in n Si junction less nanowire field effect transistors. method 1.00 0.90 0.05 asserted 1.00

What kind of paper the classifier reports this is: simulation study 1.00 · evidence from simulation or computation 1.00.

What was examined, and what was not

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  • arXiv listing abstract v1
not examined
  • full text
  • figures and tables
  • references and citing sentences
  • relations to other papers
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  • P abstract
not run
  • S sections
  • T body sentences
  • C citations
  • R cross-paper relations

Every quoted sentence on this record is the authors'. Every label is from Pith's closed vocabulary, with the probability shown beside it. Every number in the measurements table is the authors', checked by code. Record as JSON

The paper
Original abstract

In the present work, we have investigated the quantum transport in n Si junction less nanowire field effect transistors using 3 D, full band atomistic sp3d5s spin orbital coupled tight binding method. We have investigated the IDS VGS transfer characteristics, IDS VDS output characteristics, ON current, OFF current leakage, subthreshold swing and energy position resolved electron density spectrum Gn x, E in n Si junction less nanowire field effect transistors. We also study IDS VGS transfer characteristics with variation of High K gate materials. Quantum mechanical simulation is performed on the basis of Non Equilibrium Green Function formalism to solve coupled Poisson Schr "odinger equation self consistently for potentials and local density of state in n Si junction less nanowire field effect transistors.

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