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Pinned interface dipole-induced tunneling electroresistance in ferroelectric tunnel junctions

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Yin-Zhong Wu

Materials Science · Submitted 28 Sep 2014

abstract compiled · 2026-09-23 · no language-model review

The authors' main claim Tuneling electroresistance can be induced due to the nonswitchable interface dipole in FTJs with symmetric electrodes.

how it is stated · asserted 0.94 read the record →

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arXiv ID1409.7910 (version 1)
Pith IDP3ZARYXW, Pith's permanent record of this paper and its review
CitationYin-Zhong Wu. "Pinned interface dipole-induced tunneling electroresistance in ferroelectric tunnel junctions." arXiv:1409.7910 (2014). https://pith.science/paper/P3ZARYXW
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The compiled record

The paper's own sentences, arranged. Each label is drawn from a closed vocabulary; the number beside it is the probability the classifier gave that label. Numbers in the tables are the authors', checked by code. No sentence in this record was written by a model.

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Compiled by classifier-1.13-20260917 via OpenRouter, question bank abstract-p1-20260923, 2026-09-23: 1 request, 4,278 input tokens, $0.0002 reported.

What the abstract itself states, as probabilities: claims first 0.04 · states limitation 0.33 · human participants 0.01 · controlled comparison 0.27 · randomized assignment 0.01 · states quantitative result 0.06 · compares with prior results 0.45 · mentions code or data availability 0.02.

The abstract, sentence by sentence

arXiv listing abstract v1. Results and the main claim are underlined; .

Based on the structure predicted in a ferroelectric tunnel junction in the resent density functional theory study, we investigate the electron transport through the FTJ with asymmetric interfaces, i.e., one interface dipole is pinned and the other interface dipole is switchable. Tuneling electroresistance can be induced due to the nonswitchable interface dipole in FTJs with symmetric electrodes. Compared with the dependence relationship between TER and the polarization of switchable interface, TER is not sensitive to the variation of the polarization of pinned interface. A large TER can be achieved when the pinned polarization points to the ferroelectric film and low interface dielectric constants. In addition, effect of electrode on TER in the structure is also discussed.

background contribution method result interpretation main claim

What the classifier reports for each sentence. The number is the probability it gave the label.
#sentencerolethe authors' own workstates the main conclusionstrength
s0 Based on the structure predicted in a ferroelectric tunnel junction in the resent density functional theory study, we investigate the electron transport through the FTJ with asymmetric interfaces, i.e., one interface dipole is pinned and the other interface dipole is switchable. contribution 0.95 0.73 0.07 asserted 0.84
s1 Tuneling electroresistance can be induced due to the nonswitchable interface dipole in FTJs with symmetric electrodes. result 0.93 0.44 0.37 asserted 0.94
s2 Compared with the dependence relationship between TER and the polarization of switchable interface, TER is not sensitive to the variation of the polarization of pinned interface. result 1.00 0.81 0.23 asserted 1.00
s3 A large TER can be achieved when the pinned polarization points to the ferroelectric film and low interface dielectric constants. result 0.99 0.84 0.41 asserted 0.99
s4 In addition, effect of electrode on TER in the structure is also discussed. contribution 0.96 0.65 0.03 unclear 0.80

What kind of paper the classifier reports this is: simulation study 0.90 · evidence from simulation or computation 0.99.

What was examined, and what was not

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  • references and citing sentences
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Every quoted sentence on this record is the authors'. Every label is from Pith's closed vocabulary, with the probability shown beside it. Every number in the measurements table is the authors', checked by code. Record as JSON

The paper
Original abstract

Based on the structure predicted in a ferroelectric tunnel junction in the resent density functional theory study, we investigate the electron transport through the FTJ with asymmetric interfaces, i.e., one interface dipole is pinned and the other interface dipole is switchable. Tuneling electroresistance can be induced due to the nonswitchable interface dipole in FTJs with symmetric electrodes. Compared with the dependence relationship between TER and the polarization of switchable interface, TER is not sensitive to the variation of the polarization of pinned interface. A large TER can be achieved when the pinned polarization points to the ferroelectric film and low interface dielectric constants. In addition, effect of electrode on TER in the structure is also discussed.

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