RECORD
Residual Metallic Contamination of Transferred Chemical Vapor Deposited Graphene
Mesoscale and Nanoscale Physics · Submitted 5 May 2015
abstract compiled · 2026-09-23 · no language-model review
The authors' main claim As residual metallic impurities can significantly alter electronic and electrochemical properties of graphene and can severely impede the process of integration with silicon microelectronics these results reveal that further progress in synthesis, handling, and cleaning of graphene is required on the way to its advanced electronic and optoelectronic applications.
The compiled record
The paper's own sentences, arranged. Each label is drawn from a closed vocabulary; the number beside it is the probability the classifier gave that label. Numbers in the tables are the authors', checked by code. No sentence in this record was written by a model.
Open the compiled record
The abstract, sentence by sentence
Integration of graphene with Si microelectronics is very appealing by offering potentially a broad range of new functionalities. New materials to be integrated with Si platform must conform to stringent purity standards. Here, we investigate graphene layers grown on copper foils by chemical vapor deposition and transferred to silicon wafers by wet etch and electrochemical delamination methods with respect to residual sub-monolayer metallic contaminations. Regardless of the transfer method and associated cleaning scheme, time-of-flight secondary ion mass spectrometry and total reflection x-ray fluorescence measurements indicate that the graphene sheets are contaminated with residual metals (copper, iron) with a concentration exceeding 10$^{13}$ atoms/cm$^{2}$. These metal impurities appear to be partly mobile upon thermal treatment as shown by depth profiling and reduction of the minority charge carrier diffusion length in the silicon substrate. As residual metallic impurities can significantly alter electronic and electrochemical properties of graphene and can severely impede the process of integration with silicon microelectronics these results reveal that further progress in synthesis, handling, and cleaning of graphene is required on the way to its advanced electronic and optoelectronic applications.
background contribution method result interpretation main claim
| # | sentence | role | the authors' own work | states the main conclusion | strength |
|---|---|---|---|---|---|
| s0 | Integration of graphene with Si microelectronics is very appealing by offering potentially a broad range of new functionalities. | background 1.00 | 0.04 | 0.02 | asserted 0.59 |
| s1 | New materials to be integrated with Si platform must conform to stringent purity standards. | background 1.00 | 0.04 | 0.03 | asserted 1.00 |
| s2 | Here, we investigate graphene layers grown on copper foils by chemical vapor deposition and transferred to silicon wafers by wet etch and electrochemical delamination methods with respect to residual sub-monolayer metallic contaminations. | contribution 0.94 | 0.89 | 0.04 | asserted 0.84 |
| s3 | Regardless of the transfer method and associated cleaning scheme, time-of-flight secondary ion mass spectrometry and total reflection x-ray fluorescence measurements indicate that the graphene sheets are contaminated with residual metals (copper, iron) with a concentration exceeding 10$^{13}$ atoms/cm$^{2}$. | result 1.00 | 0.95 | 0.63 | asserted 0.74 |
| s4 | These metal impurities appear to be partly mobile upon thermal treatment as shown by depth profiling and reduction of the minority charge carrier diffusion length in the silicon substrate. | result 0.98 | 0.93 | 0.08 | hedged possibility 0.74 |
| s5 | As residual metallic impurities can significantly alter electronic and electrochemical properties of graphene and can severely impede the process of integration with silicon microelectronics these results reveal that further progress in synthesis, handling, and cleaning of graphene is required on the way to its advanced electronic and optoelectronic applications. | interpretation 0.67 | 0.52 | 0.91 | asserted 0.58 |
What was examined, and what was not
- arXiv listing abstract v1
- full text
- figures and tables
- references and citing sentences
- relations to other papers
- P abstract
- S sections
- T body sentences
- C citations
- R cross-paper relations
The paper
Original abstract
Integration of graphene with Si microelectronics is very appealing by offering potentially a broad range of new functionalities. New materials to be integrated with Si platform must conform to stringent purity standards. Here, we investigate graphene layers grown on copper foils by chemical vapor deposition and transferred to silicon wafers by wet etch and electrochemical delamination methods with respect to residual sub-monolayer metallic contaminations. Regardless of the transfer method and associated cleaning scheme, time-of-flight secondary ion mass spectrometry and total reflection x-ray fluorescence measurements indicate that the graphene sheets are contaminated with residual metals (copper, iron) with a concentration exceeding 10$^{13}$ atoms/cm$^{2}$. These metal impurities appear to be partly mobile upon thermal treatment as shown by depth profiling and reduction of the minority charge carrier diffusion length in the silicon substrate. As residual metallic impurities can significantly alter electronic and electrochemical properties of graphene and can severely impede the process of integration with silicon microelectronics these results reveal that further progress in synthesis, handling, and cleaning of graphene is required on the way to its advanced electronic and optoelectronic applications.
Human review
Discussion
Know something about this paper? Leave a comment, or highlight any passage above to comment on it.