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Large rectification magnetoresistance in nonmagnetic Al/Ge/Al heterojunctions

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Kun Zhang, Huan-huan Li, Peter Grünberg, Qiang Li, Sheng-tao Ye, Yu-feng Tian, Shi-shen Yan, Zhao-jun Lin
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Shi-shou Kang, Yan-xue Chen, Guo-lei Liu, Liang-mo Mei

Mesoscale and Nanoscale Physics · Submitted 25 May 2015

abstract compiled · 2026-09-23 · no language-model review

The authors' main claim The findings of rectification magnetoresistance open the way to the new nonmagnetic Ge-based spintronics devices of large rectification magnetoresistance at ambient temperature under the alternating-current due to the simultaneous implementation of the rectification and magnetoresistance in the same devices.

how it is stated · asserted 0.81 read the record →

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arXiv ID1505.06544 (version 1)
Pith IDHXNJHOAM, Pith's permanent record of this paper and its review
CitationGuo-lei Liu, Huan-huan Li, Kun Zhang, Liang-mo Mei, Peter Gr\"unberg, Qiang Li, Sheng-tao Ye, Shi-shen Yan, Shi-shou Kang, Yan-xue Chen, Yu-feng Tian, Zhao-jun Lin. "Large rectification magnetoresistance in nonmagnetic Al/Ge/Al heterojunctions." arXiv:1505.06544 (2015). https://pith.science/paper/HXNJHOAM
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The compiled record

The paper's own sentences, arranged. Each label is drawn from a closed vocabulary; the number beside it is the probability the classifier gave that label. Numbers in the tables are the authors', checked by code. No sentence in this record was written by a model.

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Compiled by classifier-1.13-20260917 via OpenRouter, question bank abstract-p1-20260923, 2026-09-23: 1 request, 3,925 input tokens, $0.0002 reported.

What the abstract itself states, as probabilities: claims first 0.58 · states limitation 0.07 · human participants 0.01 · controlled comparison 0.41 · randomized assignment 0.01 · states quantitative result 0.99 · compares with prior results 0.94 · mentions code or data availability 0.02.

The abstract, sentence by sentence

arXiv listing abstract v1. Results and the main claim are underlined; .

Magnetoresistance and rectification are two fundamental physical properties of heterojunctions and respectively have wide applications in spintronics devices. Being different from the well known various magnetoresistance effects, here we report a brand new large magnetoresistance that can be regarded as rectification magnetoresistance: the application of a pure small sinusoidal alternating-current to the nonmagnetic Al/Ge Schottky heterojunctions can generate a significant direct-current voltage, and this rectification voltage strongly varies with the external magnetic field. We find that the rectification magnetoresistance in Al/Ge Schottky heterojunctions is as large as 250% at room temperature, which is greatly enhanced as compared with the conventional magnetoresistance of 70%. The findings of rectification magnetoresistance open the way to the new nonmagnetic Ge-based spintronics devices of large rectification magnetoresistance at ambient temperature under the alternating-current due to the simultaneous implementation of the rectification and magnetoresistance in the same devices.

background contribution method result interpretation main claim

What the classifier reports for each sentence. The number is the probability it gave the label.
#sentencerolethe authors' own workstates the main conclusionstrength
s0 Magnetoresistance and rectification are two fundamental physical properties of heterojunctions and respectively have wide applications in spintronics devices. background 1.00 0.04 0.03 asserted 1.00
s1 Being different from the well known various magnetoresistance effects, here we report a brand new large magnetoresistance that can be regarded as rectification magnetoresistance: the application of a pure small sinusoidal alternating-current to the nonmagnetic Al/Ge Schottky heterojunctions can generate a significant direct-current voltage, and this rectification voltage strongly varies with the external magnetic field. contribution 0.94 0.95 0.59 asserted 1.00
s2 We find that the rectification magnetoresistance in Al/Ge Schottky heterojunctions is as large as 250% at room temperature, which is greatly enhanced as compared with the conventional magnetoresistance of 70%. result 1.00 0.96 0.42 asserted 1.00
s3 The findings of rectification magnetoresistance open the way to the new nonmagnetic Ge-based spintronics devices of large rectification magnetoresistance at ambient temperature under the alternating-current due to the simultaneous implementation of the rectification and magnetoresistance in the same devices. interpretation 0.93 0.58 0.58 asserted 0.81

What kind of paper the classifier reports this is: empirical study 1.00 · evidence from observation or experiment 1.00.

What was examined, and what was not

sources read
  • arXiv listing abstract v1
not examined
  • full text
  • figures and tables
  • references and citing sentences
  • relations to other papers
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  • P abstract
not run
  • S sections
  • T body sentences
  • C citations
  • R cross-paper relations

Every quoted sentence on this record is the authors'. Every label is from Pith's closed vocabulary, with the probability shown beside it. Every number in the measurements table is the authors', checked by code. Record as JSON

The paper
Original abstract

Magnetoresistance and rectification are two fundamental physical properties of heterojunctions and respectively have wide applications in spintronics devices. Being different from the well known various magnetoresistance effects, here we report a brand new large magnetoresistance that can be regarded as rectification magnetoresistance: the application of a pure small sinusoidal alternating-current to the nonmagnetic Al/Ge Schottky heterojunctions can generate a significant direct-current voltage, and this rectification voltage strongly varies with the external magnetic field. We find that the rectification magnetoresistance in Al/Ge Schottky heterojunctions is as large as 250% at room temperature, which is greatly enhanced as compared with the conventional magnetoresistance of 70%. The findings of rectification magnetoresistance open the way to the new nonmagnetic Ge-based spintronics devices of large rectification magnetoresistance at ambient temperature under the alternating-current due to the simultaneous implementation of the rectification and magnetoresistance in the same devices.

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