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A physics based model of gate tunable metal-graphene contact resistance benchmarked against experimental data

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arxiv 1507.08412 v1 pith:ERJDBNUR submitted 2015-07-30 cond-mat.mes-hall cond-mat.mtrl-sci

Ferney A. Chaves , David Jiménez , Abhay A. Sagade , Wonjae Kim , Juha Riikonen , Harri Lipsanen , Daniel Neumaier This is my paper
classification cond-mat.mes-hallcond-mat.mtrl-sci
keywords resistancemodelcontactexperimentalgategraphenemetal-grapheneresults
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The metal-graphene contact resistance is a technological bottleneck for the realization of viable graphene based electronics. We report a useful model to find the gate tunable components of this resistance determined by the sequential tunneling of carriers between the 3D-metal and 2D-graphene underneath followed by Klein tunneling to the graphene in the channel. This model quantifies the intrinsic factors that control that resistance, including the effect of unintended chemical doping. Our results agree with experimental results for several metals.

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