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Valence band electronic structure evolution of graphene oxide upon thermal annealing for optoelectronics

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Paper breakdownThe authors' claims, conditions and measurements, as JSON Signed receiptProof this review has not been altered
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Hisato Yamaguchi, Shuichi Ogawa, Daiki Watanabe, Hideaki Hozumi, Yongqian Gao, Goki Eda, Cecilia Mattevi, Takeshi Fujita
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Akitaka Yoshigoe, Shinji Ishizuka, Lyudmyla Adamska, Takatoshi Yamada, Andrew M. Dattelbaum, Gautam Gupta, Stephen K. Doorn, Kirill A. Velizhanin, Yuden Teraoka, Mingwei Chen, Han Htoon, Manish Chhowalla, Aditya D. Mohite, Yuji Takakuwa

Materials Science · Submitted 3 May 2016

abstract compiled · 2026-09-23 · no language-model review

The authors' main claim The results revealed that annealing at a temperature of ~500 oC leads to the desired properties, demonstrated by a uniform and an order of magnitude enhanced photocurrent map of an individual GO sheet compared to as-synthesized counterpart.

how it is stated · asserted 1.00 read the record →

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arXiv ID1605.01048 (version 1)
Pith IDTPCA7OHO, Pith's permanent record of this paper and its review
CitationAditya D. Mohite, Akitaka Yoshigoe, Andrew M. Dattelbaum, Cecilia Mattevi, Daiki Watanabe, Gautam Gupta, Goki Eda, Han Htoon, Hideaki Hozumi, Hisato Yamaguchi, Kirill A. Velizhanin, Lyudmyla Adamska, Manish Chhowalla, Mingwei Chen, Shinji Ishizuka, Shuichi Ogawa, Stephen K. Doorn, Takatoshi Yamada, Takeshi Fujita, Yongqian Gao, Yuden Teraoka, Yuji Takakuwa. "Valence band electronic structure evolution of graphene oxide upon thermal annealing for optoelectronics." arXiv:1605.01048 (2016). https://pith.science/paper/TPCA7OHO
Claim paper

The compiled record

The paper's own sentences, arranged. Each label is drawn from a closed vocabulary; the number beside it is the probability the classifier gave that label. Numbers in the tables are the authors', checked by code. No sentence in this record was written by a model.

Open the compiled record

Compiled by classifier-1.13.0 via TypeSafe API, question bank abstract-p1-20260923, 2026-09-23: 1 request, 4,969 input tokens.

What the abstract itself states, as probabilities: claims first 0.03 · states limitation 0.07 · human participants 0.02 · controlled comparison 0.82 · randomized assignment 0.01 · states quantitative result 0.96 · compares with prior results 0.60 · mentions code or data availability 0.02.

The abstract, sentence by sentence

arXiv listing abstract v1. Results and the main claim are underlined; .

We report valence band electronic structure evolution of graphene oxide (GO) upon its thermal reduction. Degree of oxygen functionalization was controlled by annealing temperatures, and an electronic structure evolution was monitored using real-time ultraviolet photoelectron spectroscopy. We observed a drastic increase in density of states around the Fermi level upon thermal annealing at ~600 oC. The result indicates that while there is an apparent band gap for GO prior to a thermal reduction, the gap closes after an annealing around that temperature. This trend of band gap closure was correlated with electrical, chemical, and structural properties to determine a set of GO material properties that is optimal for optoelectronics. The results revealed that annealing at a temperature of ~500 oC leads to the desired properties, demonstrated by a uniform and an order of magnitude enhanced photocurrent map of an individual GO sheet compared to as-synthesized counterpart.

background contribution method result interpretation main claim

What the classifier reports for each sentence. The number is the probability it gave the label.
#sentencerolethe authors' own workstates the main conclusionstrength
s0 We report valence band electronic structure evolution of graphene oxide (GO) upon its thermal reduction. contribution 1.00 0.94 0.07 asserted 0.93
s1 Degree of oxygen functionalization was controlled by annealing temperatures, and an electronic structure evolution was monitored using real-time ultraviolet photoelectron spectroscopy. method 1.00 0.94 0.03 asserted 0.99
s2 We observed a drastic increase in density of states around the Fermi level upon thermal annealing at ~600 oC. result 1.00 0.96 0.14 asserted 1.00
s3 The result indicates that while there is an apparent band gap for GO prior to a thermal reduction, the gap closes after an annealing around that temperature. interpretation 0.99 0.90 0.29 hedged possibility 0.98
s4 This trend of band gap closure was correlated with electrical, chemical, and structural properties to determine a set of GO material properties that is optimal for optoelectronics. interpretation 0.43 0.90 0.28 asserted 0.97
s5 The results revealed that annealing at a temperature of ~500 oC leads to the desired properties, demonstrated by a uniform and an order of magnitude enhanced photocurrent map of an individual GO sheet compared to as-synthesized counterpart. result 0.99 0.96 0.58 asserted 1.00

What kind of paper the classifier reports this is: empirical study 1.00 · evidence from observation or experiment 1.00.

What was examined, and what was not

sources read
  • arXiv listing abstract v1
not examined
  • full text
  • figures and tables
  • references and citing sentences
  • relations to other papers
levels run
  • P abstract
not run
  • S sections
  • T body sentences
  • C citations
  • R cross-paper relations

Every quoted sentence on this record is the authors'. Every label is from Pith's closed vocabulary, with the probability shown beside it. Every number in the measurements table is the authors', checked by code. Record as JSON

The paper
Original abstract

We report valence band electronic structure evolution of graphene oxide (GO) upon its thermal reduction. Degree of oxygen functionalization was controlled by annealing temperatures, and an electronic structure evolution was monitored using real-time ultraviolet photoelectron spectroscopy. We observed a drastic increase in density of states around the Fermi level upon thermal annealing at ~600 oC. The result indicates that while there is an apparent band gap for GO prior to a thermal reduction, the gap closes after an annealing around that temperature. This trend of band gap closure was correlated with electrical, chemical, and structural properties to determine a set of GO material properties that is optimal for optoelectronics. The results revealed that annealing at a temperature of ~500 oC leads to the desired properties, demonstrated by a uniform and an order of magnitude enhanced photocurrent map of an individual GO sheet compared to as-synthesized counterpart.

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