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Synthesis, characterization and physical properties of layered bismuthide PtBi₂

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arxiv 1605.08956 v2 pith:HJ222ZC6 submitted 2016-05-29 cond-mat.str-el cond-mat.supr-con

Synthesis, characterization and physical properties of layered bismuthide PtBi$_2$

C. Q. Xu , X. Z. Xing , Xiaofeng Xu , L. Q. Che , Bin Chen , Xin Lu , Jianhui Dai , Z. X. Shi This is my paper
classification cond-mat.str-el cond-mat.supr-con
keywords bismuthidephysicalpropertiesptbialongalternateaxisbeta
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abstract

We report details of single crystal growth of stoichiometric bismuthide PtBi$_2$ whose structure consists of alternate stacking of Pt layer sandwiched by Bi bilayer along the $c$-axis. The compound crystallizes in space group P-3 with a hexagonal unit cell of $a$=$b$=6.553$\AA$, $c$=6.165$\AA$. The magnetization data show opposite sign for fields parallel and perpendicular to the Pt layers, respectively. The $T$-dependent resistivity is typical of a metal and the magnetic response shows clear two types of charge carriers and the validity of the semi-classical Kohler's rule. Its physical properties was discussed in comparison with recently proposed topological superconductor $\beta$-PdBi$_2$.

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