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Characterization methods dedicated to nanometer-thick hBN layers
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Hexagonal boron nitride (hBN) regains interest as a strategic component in graphene engineering and in van der Waals heterostructures built with two dimensional materials. It is crucial then, to handle reliable characterization techniques capable to assess the quality of structural and electronic properties of the hBN material used. We present here characterization procedures based on optical spectroscopies, namely cathodoluminescence and Raman, with the additional support of structural analysis conducted by transmission electron microscopy. We show the capability of optical spectroscopies to investigate and benchmark the optical and structural properties of various hBN thin layers sources.
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Cited by 1 Pith paper
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Quantifying the creation of negatively charged boron vacancies in He-ion irradiated hexagonal boron nitride
Using a microscopic charge model plus a fitted background charge, the authors estimate that about 0.2% of all helium-created boron vacancies in hBN become optically active VB- defects, with the true fraction possibly higher.
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