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Upscaling High-Quality CVD Graphene Devices to 100 Micron-Scale and Beyond

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arxiv 1611.06199 v2 pith:SX772T4H submitted 2016-11-18 cond-mat.mtrl-sci cond-mat.mes-hall

Timothy J. Lyon , Jonas Sichau , August Dorn , Amaia Zurutuza , Amaia Pesquera , Alba Centeno , Robert H. Blick This is my paper · ORCID
classification cond-mat.mtrl-scicond-mat.mes-hall
keywords graphenemeasurementsprocessallowsannealingbeyondcarriercharacterized
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abstract

We describe a method for transferring ultra large-scale CVD-grown graphene sheets. These samples can be fabricated as large as several cm$^2$ and are characterized by magneto-transport measurements on SiO$_2$ substrates. The process we have developed is highly effective and limits damage to the graphene all the way through metal liftoff, as shown in carrier mobility measurements and the observation of the quantum Hall effect. The charge-neutral point is shown to move drastically to near-zero gate voltage after a 2-step post-fabrication annealing process, which also allows for greatly diminished hysteresis.

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