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A HEMT-Based Cryogenic Charge Amplifier with sub-100 eVee Ionization Resolution for Massive Semiconductor Dark Matter Detectors

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arxiv 1611.09712 v4 pith:TEVQPSBP submitted 2016-11-29 physics.ins-det astro-ph.IM

classification physics.ins-detastro-ph.IM
keywords ionizationresolutionamplifierdetectorsmassivebaselinechargecryogenic
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abstract

We present the measured baseline ionization resolution of a HEMT-based cryogenic charge amplifier coupled to a CDMS-II detector. The amplifier has been developed to allow massive semiconductor dark matter detectors to retain background discrimination at the low recoil energies produced by low-mass WIMPs. We find a calibrated baseline ionization resolution of $\sigma_E = 91\,\text{eV}_{ee}$. To our knowledge, this is the best direct ionization resolution achieved with such massive ($\approx$150 pF capacitance) radiation detectors.

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  1. SPLENDOR: a novel detector platform to search for light dark matter with narrow-gap semiconductors

    physics.ins-det 2025-07 conditional novelty 6.0 of 10

    A dark matter detector platform combining a 60 meV-gap semiconductor (Eu5In2Sb6) with cryogenic HEMT readout and daily modulation analysis is presented, with projected sensitivity to sub-MeV dark matter.

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