RECORD
Magnetoresistance in YBi and LuBi semimetals due to nearly perfect carrier compensation
Materials Science · Submitted 22 Dec 2017
abstract compiled · 2026-09-23 · no language-model review
The authors' main claim Our thorough examination of electron transport properties of both compounds show that observed features are the consequence of nearly perfect carrier compensation rather than of possible nontrivial topology of electronic states.
The compiled record
The paper's own sentences, arranged. Each label is drawn from a closed vocabulary; the number beside it is the probability the classifier gave that label. Numbers in the tables are the authors', checked by code. No sentence in this record was written by a model.
Open the compiled record
The abstract, sentence by sentence
Monobismuthides of yttrium and lutetium are shown as new representatives of materials which exhibit extreme magnetoresistance and magnetic-field-induced resistivity plateau. At low temperatures and in magnetic field of 9T the magnetoresistance attains the order of magnitude of 10,000% and 1,000%, on YBi and LuBi, respectively. Our thorough examination of electron transport properties of both compounds show that observed features are the consequence of nearly perfect carrier compensation rather than of possible nontrivial topology of electronic states. The field-induced plateau of electrical resistivity can be explained with Kohler scaling. Anisotropic multi-band model of electronic transport describes very well the magnetic field dependence of electrical resistivity and Hall resistivity. Data obtained from the Shubnikov-de Haas oscillations analysis also confirm that Fermi surface of each compound contains almost equal amounts of holes and electrons. First-principle calculations of electronic band structure are in a very good agreement with the experimental data.
background contribution method result interpretation main claim
| # | sentence | role | the authors' own work | states the main conclusion | strength |
|---|---|---|---|---|---|
| s0 | Monobismuthides of yttrium and lutetium are shown as new representatives of materials which exhibit extreme magnetoresistance and magnetic-field-induced resistivity plateau. | contribution 0.55 | 0.84 | 0.18 | asserted 1.00 |
| s1 | At low temperatures and in magnetic field of 9T the magnetoresistance attains the order of magnitude of 10,000% and 1,000%, on YBi and LuBi, respectively. | result 1.00 | 0.87 | 0.06 | asserted 1.00 |
| s2 | Our thorough examination of electron transport properties of both compounds show that observed features are the consequence of nearly perfect carrier compensation rather than of possible nontrivial topology of electronic states. | interpretation 0.99 | 0.95 | 0.88 | asserted 1.00 |
| s3 | The field-induced plateau of electrical resistivity can be explained with Kohler scaling. | interpretation 0.94 | 0.72 | 0.06 | asserted 0.96 |
| s4 | Anisotropic multi-band model of electronic transport describes very well the magnetic field dependence of electrical resistivity and Hall resistivity. | result 0.51 | 0.87 | 0.07 | asserted 1.00 |
| s5 | Data obtained from the Shubnikov-de Haas oscillations analysis also confirm that Fermi surface of each compound contains almost equal amounts of holes and electrons. | result 0.94 | 0.93 | 0.12 | asserted 0.99 |
| s6 | First-principle calculations of electronic band structure are in a very good agreement with the experimental data. | result 0.93 | 0.82 | 0.04 | asserted 1.00 |
What was examined, and what was not
- arXiv listing abstract v3
- full text
- figures and tables
- references and citing sentences
- relations to other papers
- P abstract
- S sections
- T body sentences
- C citations
- R cross-paper relations
The paper
Original abstract
Monobismuthides of yttrium and lutetium are shown as new representatives of materials which exhibit extreme magnetoresistance and magnetic-field-induced resistivity plateau. At low temperatures and in magnetic field of 9T the magnetoresistance attains the order of magnitude of 10,000% and 1,000%, on YBi and LuBi, respectively. Our thorough examination of electron transport properties of both compounds show that observed features are the consequence of nearly perfect carrier compensation rather than of possible nontrivial topology of electronic states. The field-induced plateau of electrical resistivity can be explained with Kohler scaling. Anisotropic multi-band model of electronic transport describes very well the magnetic field dependence of electrical resistivity and Hall resistivity. Data obtained from the Shubnikov-de Haas oscillations analysis also confirm that Fermi surface of each compound contains almost equal amounts of holes and electrons. First-principle calculations of electronic band structure are in a very good agreement with the experimental data.
Human review
How the literature uses it
1 arXiv paper cite this in 1 sentence
Papers citing it
Cites it as background 1 paper
-
Non-magnetic rare-earth monopnictides with a chemical formula RX where R = Y or La and X = As, Sb, and Bi have attracted attention because they exhibit a non-saturating and extremely large magnetoresistance (XMR) [ref] .
Interplay of Magnetism and Transport in HoBi · Introduction · 0.99
What it cites · 1 sentence without a confident label
Cites as background 1 paper
-
Two decades later it has been proposed that lanthanum monopnictides could be topologically nontrivial materials [ref] and magnetotransport properties of LaSb and LaBi have been found to resemble those of topological semimetals [ref] .
Topological semimetals and topological insulators in rare earth monopnictides · Introduction · 0.91
Discussion
Know something about this paper? Leave a comment, or highlight any passage above to comment on it.